Vishay IRF644PBF-BE3
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Manufacturer
Manufacturer No
IRF644PBF-BE3
Date Code
22+
Quantity
2,548
Availability
In Stock
Package
TO-220AB
Description
Trans MOSFET N-CH 250V 14A 3-Pin(3+Tab) TO-220AB
Datasheet
Payment
Delivery
HTS
8541.29.00.55
Tab
Tab
PPAP
No
EU RoHS
Compliant with Exemption
Category
Power MOSFET
Mounting
Through Hole
ECCN (US)
EAR99
Pin Count
3
Automotive
No
PCB changed
3
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Package Width
4.65(Max)
Package Height
9.14(Max)
Package Length
10.52(Max)
Supplier Package
TO-220AB
Maximum IDSS (uA)
25
Standard Package Name
TO
Manufacturer Lead Time
46 weeks
Typical Fall Time (ns)
49
Typical Rise Time (ns)
24
Number of Elements per Chip
1
Maximum Gate Resistance (Ohm)
1.2
Minimum Gate Resistance (Ohm)
0.3
Maximum Power Dissipation (mW)
125000
Typical Gate Charge @ 10V (nC)
68(Max)
Typical Gate Charge @ Vgs (nC)
68(Max)@10V
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
330
Typical Turn-On Delay Time (ns)
11
Maximum Drain-Source Voltage (V)
250
Typical Turn-Off Delay Time (ns)
53
Maximum Diode Forward Voltage (V)
1.8
Typical Gate to Drain Charge (nC)
35(Max)
Maximum Gate Threshold Voltage (V)
4
Minimum Gate Threshold Voltage (V)
2
Typical Gate to Source Charge (nC)
11(Max)
Typical Reverse Recovery Time (ns)
250
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
14
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
1300@25V
Typical Reverse Recovery Charge (nC)
2300
Maximum Drain-Source Resistance (mOhm)
280@10V
Maximum Gate-Source Leakage Current (nA)
100
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
56
Typical Reverse Transfer Capacitance @ Vds (pF)
85@25V
| Attribute | Value |
|---|---|
| HTS | 8541.29.00.55 |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Category | Power MOSFET |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.65(Max) |
| Package Height | 9.14(Max) |
| Package Length | 10.52(Max) |
| Supplier Package | TO-220AB |
| Maximum IDSS (uA) | 25 |
| Standard Package Name | TO |
| Manufacturer Lead Time | 46 weeks |
| Typical Fall Time (ns) | 49 |
| Typical Rise Time (ns) | 24 |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 1.2 |
| Minimum Gate Resistance (Ohm) | 0.3 |
| Maximum Power Dissipation (mW) | 125000 |
| Typical Gate Charge @ 10V (nC) | 68(Max) |
| Typical Gate Charge @ Vgs (nC) | 68(Max)@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 330 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Drain-Source Voltage (V) | 250 |
| Typical Turn-Off Delay Time (ns) | 53 |
| Maximum Diode Forward Voltage (V) | 1.8 |
| Typical Gate to Drain Charge (nC) | 35(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 11(Max) |
| Typical Reverse Recovery Time (ns) | 250 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 14 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1300@25V |
| Typical Reverse Recovery Charge (nC) | 2300 |
| Maximum Drain-Source Resistance (mOhm) | 280@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 56 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 85@25V |
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