
Infineon Technologies IRF640NSTRLPBF

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| Attribute | Value |
|---|---|
| Mfr | Infineon Technologies |
| Grade | - |
| Series | HEXFET® |
| FET Type | N-Channel |
| Packaging | Tape & Reel (TR); Cut Tape (CT) |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Qualification | - |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | IRF640 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V |
| Power Dissipation (Max) | 150W (Tc) |
| Supplier Device Package | D2PAK |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
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