10-13 NOV 2026 · Munich, Germany

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Vishay IRF640SPBF

Vishay IRF640SPBF electronic component product image

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Manufacturer
Manufacturer No
IRF640SPBF
Date Code
22+
Quantity
1,000
Availability
In Stock
Package
D2PAK
Description
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK
Detailed Description
Make an effective common gate amplifier using this IRF640SPBF power MOSFET from Vishay. Its maximum power dissipation is 3100 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Datasheet
Payment
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Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
COMPONENTS
Tab
Tab
PPAP
No
SVHC
Yes
EU RoHS
Compliant with Exemption
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Pin Count
3
Automotive
No
PCB changed
2
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Package Width
9.65(Max)
Package Height
4.83(Max)
Package Length
10.67(Max)
Supplier Package
D2PAK
Standard Package Name
TO
Manufacturer Lead Time
20 weeks
SVHC Exceeds Threshold
Yes
Typical Fall Time (ns)
36
Typical Rise Time (ns)
51
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
3100
Typical Gate Charge @ 10V (nC)
70(Max)
Typical Gate Charge @ Vgs (nC)
70(Max)@10V
Maximum Gate-Source Voltage (V)
±20
Typical Turn-On Delay Time (ns)
14
Maximum Drain-Source Voltage (V)
200
Typical Turn-Off Delay Time (ns)
45
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
18
Typical Input Capacitance @ Vds (pF)
1300@25V
Maximum Drain-Source Resistance (mOhm)
180@10V
AttributeValue
HTSCOMPONENTS
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
CategoryPower MOSFET
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Supplier PackageD2PAK
Standard Package NameTO
Manufacturer Lead Time20 weeks
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)36
Typical Rise Time (ns)51
Number of Elements per Chip1
Maximum Power Dissipation (mW)3100
Typical Gate Charge @ 10V (nC)70(Max)
Typical Gate Charge @ Vgs (nC)70(Max)@10V
Maximum Gate-Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain-Source Voltage (V)200
Typical Turn-Off Delay Time (ns)45
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18
Typical Input Capacitance @ Vds (pF)1300@25V
Maximum Drain-Source Resistance (mOhm)180@10V

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