Vishay IRF640PBF
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Manufacturer
Manufacturer No
IRF640PBF
Date Code
22+
Quantity
1,000
Availability
In Stock
Package
TO-220AB
Description
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB
Detailed Description
Make an effective common gate amplifier using this IRF640PBF power MOSFET from Vishay. Its maximum power dissipation is 125000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Datasheet
Payment
Delivery
HTS
COMPONENTS
Tab
Tab
PPAP
No
SVHC
Yes
EU RoHS
Compliant with Exemption
Category
Power MOSFET
Mounting
Through Hole
ECCN (US)
EAR99
Pin Count
3
Automotive
No
Lead Shape
Through Hole
PCB changed
3
Availability
In Stock
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Package Width
4.45
Package Height
8.89
Package Length
10.28
Supplier Package
TO-220AB
Maximum IDSS (uA)
25
Standard Package Name
TO
SVHC Exceeds Threshold
Yes
Typical Fall Time (ns)
36
Typical Rise Time (ns)
51
Number of Elements per Chip
1
Maximum Gate Resistance (Ohm)
3.6
Minimum Gate Resistance (Ohm)
0.5
Maximum Power Dissipation (mW)
125000
Typical Gate Charge @ 10V (nC)
70(Max)
Typical Gate Charge @ Vgs (nC)
70(Max)@10V
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
430
Typical Turn-On Delay Time (ns)
14
Maximum Drain-Source Voltage (V)
200
Typical Gate Plateau Voltage (V)
6.5
Typical Turn-Off Delay Time (ns)
45
Maximum Diode Forward Voltage (V)
2
Typical Gate to Drain Charge (nC)
39(Max)
Maximum Gate Threshold Voltage (V)
4
Minimum Gate Threshold Voltage (V)
2
Typical Gate to Source Charge (nC)
13(Max)
Typical Reverse Recovery Time (ns)
300
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
18
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
1300@25V
Typical Reverse Recovery Charge (nC)
3400
Maximum Drain-Source Resistance (mOhm)
180@10V
Maximum Gate-Source Leakage Current (nA)
100
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
72
Typical Reverse Transfer Capacitance @ Vds (pF)
130@25V
| Attribute | Value |
|---|---|
| HTS | COMPONENTS |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Category | Power MOSFET |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Availability | In Stock |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.45 |
| Package Height | 8.89 |
| Package Length | 10.28 |
| Supplier Package | TO-220AB |
| Maximum IDSS (uA) | 25 |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 36 |
| Typical Rise Time (ns) | 51 |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 3.6 |
| Minimum Gate Resistance (Ohm) | 0.5 |
| Maximum Power Dissipation (mW) | 125000 |
| Typical Gate Charge @ 10V (nC) | 70(Max) |
| Typical Gate Charge @ Vgs (nC) | 70(Max)@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 430 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Drain-Source Voltage (V) | 200 |
| Typical Gate Plateau Voltage (V) | 6.5 |
| Typical Turn-Off Delay Time (ns) | 45 |
| Maximum Diode Forward Voltage (V) | 2 |
| Typical Gate to Drain Charge (nC) | 39(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 13(Max) |
| Typical Reverse Recovery Time (ns) | 300 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 18 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1300@25V |
| Typical Reverse Recovery Charge (nC) | 3400 |
| Maximum Drain-Source Resistance (mOhm) | 180@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 72 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 130@25V |
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