10-13 NOV 2026 · Munich, Germany

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Vishay SI2319CDS-T1-GE3

Vishay SI2319CDS-T1-GE3 electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
SI2319CDS-T1-GE3
Date Code
25+
Quantity
21,000
Availability
In Stock
Package
SOT-23
Packaging
Tape and Reel
Description
Trans MOSFET P-CH 40V 4.4A 3-Pin SOT-23 T/R
Detailed Description
Compared to traditional transistors, SI2319CDS-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Payment
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Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
COMPONENTS
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
3
Automotive
No
Lead Shape
Gull-wing
PCB changed
3
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
P
Configuration
Single
Package Width
1.4(Max)
Package Height
1.02(Max)
Package Length
3.04(Max)
Supplier Package
SOT-23
Process Technology
0.18um
Standard Package Name
SOT
Manufacturer Lead Time
52 weeks
Typical Fall Time (ns)
8|10
Typical Rise Time (ns)
27|9
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
1250
Typical Gate Charge @ 10V (nC)
13.6
Typical Gate Charge @ Vgs (nC)
Maximum Gate-Source Voltage (V)
±20
Typical Turn-On Delay Time (ns)
40|8
Maximum Drain-Source Voltage (V)
40
Typical Turn-Off Delay Time (ns)
18|20
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
4.4
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
595@20V
Maximum Drain-Source Resistance (mOhm)
77@10V
AttributeValue
HTSCOMPONENTS
PPAPNo
EU RoHSCompliant
CategoryPower MOSFET
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Supplier PackageSOT-23
Process Technology0.18um
Standard Package NameSOT
Manufacturer Lead Time52 weeks
Typical Fall Time (ns)8|10
Typical Rise Time (ns)27|9
Number of Elements per Chip1
Maximum Power Dissipation (mW)1250
Typical Gate Charge @ 10V (nC)13.6
Typical Gate Charge @ Vgs (nC)[email protected]|13.6@10V
Maximum Gate-Source Voltage (V)±20
Typical Turn-On Delay Time (ns)40|8
Maximum Drain-Source Voltage (V)40
Typical Turn-Off Delay Time (ns)18|20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.4
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)595@20V
Maximum Drain-Source Resistance (mOhm)77@10V

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