Vishay SI2315BDS-T1-E3

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| Attribute | Value |
|---|---|
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 1.4(Max) |
| Package Height | 1.02(Max) |
| Package Length | 3.04(Max) |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 50 |
| Typical Rise Time (ns) | 35 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1190 |
| Typical Gate Charge @ Vgs (nC) | [email protected] |
| Maximum Gate-Source Voltage (V) | ±8 |
| Typical Output Capacitance (pF) | 275 |
| Typical Turn-On Delay Time (ns) | 15 |
| Maximum Drain-Source Voltage (V) | 12 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Gate to Drain Charge (nC) | 2.3 |
| Maximum Gate Threshold Voltage (V) | 0.9 |
| Minimum Gate Threshold Voltage (V) | 0.45 |
| Typical Gate to Source Charge (nC) | 1.1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 715@6V |
| Maximum Drain-Source Resistance (mOhm) | [email protected] |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 8 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 12 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 200@6V |
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