10-13 NOV 2026 · Munich, Germany

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Vishay SI2316BDS-T1-E3

Vishay SI2316BDS-T1-E3 electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
SI2316BDS-T1-E3
Date Code
21+
Quantity
3,000
Availability
In Stock
Package
SOT-23
Packaging
Tape and Reel
Description
Trans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R
Detailed Description
Make an effective common source amplifier using this SI2316BDS-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 1250 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.10.00.80
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
3
Automotive
No
Lead Shape
Gull-wing
PCB changed
3
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Package Width
1.4(Max)
Package Height
1.02(Max)
Package Length
3.04(Max)
Supplier Package
SOT-23
Maximum IDSS (uA)
1
Standard Package Name
SOT
Typical Fall Time (ns)
7|23
Typical Rise Time (ns)
11|65
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
1250
Typical Gate Charge @ 10V (nC)
6.35
Typical Gate Charge @ Vgs (nC)
Maximum Gate-Source Voltage (V)
±20
Typical Turn-On Delay Time (ns)
4.5|20
Maximum Drain-Source Voltage (V)
30
Typical Turn-Off Delay Time (ns)
11|12
Maximum Gate Threshold Voltage (V)
3
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
4.5
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
350@15V
Maximum Drain-Source Resistance (mOhm)
50@10V
Maximum Gate-Source Leakage Current (nA)
100
AttributeValue
HTS8541.10.00.80
PPAPNo
EU RoHSCompliant
CategoryPower MOSFET
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Supplier PackageSOT-23
Maximum IDSS (uA)1
Standard Package NameSOT
Typical Fall Time (ns)7|23
Typical Rise Time (ns)11|65
Number of Elements per Chip1
Maximum Power Dissipation (mW)1250
Typical Gate Charge @ 10V (nC)6.35
Typical Gate Charge @ Vgs (nC)[email protected]|6.35@10V
Maximum Gate-Source Voltage (V)±20
Typical Turn-On Delay Time (ns)4.5|20
Maximum Drain-Source Voltage (V)30
Typical Turn-Off Delay Time (ns)11|12
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)350@15V
Maximum Drain-Source Resistance (mOhm)50@10V
Maximum Gate-Source Leakage Current (nA)100

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