Texas Instruments CSD85312Q3E

Texas Instruments CSD85312Q3E electronic component product image

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Manufacturer
Manufacturer No
CSD85312Q3E
Quantity
29
Availability
In Stock
Package
8-PowerVDFN
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET 2N-CH 20V 39A 8VSON
Detailed Description
Mosfet Array 20V 39A 2.5W Surface Mount 8-VSON (3.3x3.3)
Datasheet
Payment
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Delivery
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AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Series
NexFET™
Packaging
Tape & Reel (TR); Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate, 5V Drive
Power - Max
2.5W
Manufacturer
Texas Instruments
Configuration
2 N-Channel (Dual) Common Source
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Vgs(th) (Max) @ Id
1.4V @ 250µA
Base Product Number
CSD85312
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
12.4mOhm @ 10A, 8V
Supplier Device Package
8-VSON (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs
15.2nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
2390pF @ 10V
Current - Continuous Drain (Id) @ 25°C
39A
AttributeValue
SeriesNexFET™
PackagingTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate, 5V Drive
Power - Max2.5W
ManufacturerTexas Instruments
Configuration2 N-Channel (Dual) Common Source
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Vgs(th) (Max) @ Id1.4V @ 250µA
Base Product NumberCSD85312
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs12.4mOhm @ 10A, 8V
Supplier Device Package8-VSON (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs15.2nC @ 4.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds2390pF @ 10V
Current - Continuous Drain (Id) @ 25°C39A

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Step1: Product
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