onsemi NTJD4401NT1G
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Manufacturer
Manufacturer No
NTJD4401NT1G
Date Code
26+
Quantity
30,000
Availability
In Stock
Package
SC-88
Packaging
Tape and Reel
Description
Trans MOSFET N-CH 20V 0.91A 6-Pin SC-88 T/R
Detailed Description
Compared to traditional transistors, NTJD4401NT1G power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 550 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Datasheet
Payment
Delivery
HTS
NTJD4401NT1G
PPAP
No
EU RoHS
Compliant
Category
Small Signal
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
6
Automotive
No
Lead Shape
Gull-wing
PCB changed
6
Availability
In Stock
Channel Mode
Enhancement
Channel Type
N
Configuration
Dual
Package Width
1.25
Package Height
0.9
Package Length
2
Supplier Package
SC-88
Maximum IDSS (uA)
1
Standard Package Name
SOT
Manufacturer Lead Time
45 weeks
Typical Fall Time (ns)
506
Typical Rise Time (ns)
227
Number of Elements per Chip
2
Maximum Power Dissipation (mW)
550
Typical Gate Charge @ Vgs (nC)
Maximum Gate-Source Voltage (V)
±12
Typical Output Capacitance (pF)
13
Typical Turn-On Delay Time (ns)
83
Maximum Drain-Source Voltage (V)
20
Typical Gate Plateau Voltage (V)
1.5
Typical Turn-Off Delay Time (ns)
786
Maximum Diode Forward Voltage (V)
1.1
Typical Diode Forward Voltage (V)
0.76
Typical Gate to Drain Charge (nC)
0.4
Maximum Gate Threshold Voltage (V)
1.5
Minimum Gate Threshold Voltage (V)
0.6
Typical Gate Threshold Voltage (V)
0.92
Typical Gate to Source Charge (nC)
0.2
Typical Reverse Recovery Time (ns)
410
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
0.91
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
33@20V
Maximum Drain-Source Resistance (mOhm)
Maximum Gate-Source Leakage Current (nA)
10000
Maximum Positive Gate-Source Voltage (V)
12
Maximum Pulsed Drain Current @ TC=25°C (A)
1.2
Typical Drain-Source Resistance @ 25°C (mOhm)
Typical Reverse Transfer Capacitance @ Vds (pF)
2.8@20V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
458
| Attribute | Value |
|---|---|
| HTS | NTJD4401NT1G |
| PPAP | No |
| EU RoHS | Compliant |
| Category | Small Signal |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Availability | In Stock |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 1.25 |
| Package Height | 0.9 |
| Package Length | 2 |
| Supplier Package | SC-88 |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SOT |
| Manufacturer Lead Time | 45 weeks |
| Typical Fall Time (ns) | 506 |
| Typical Rise Time (ns) | 227 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 550 |
| Typical Gate Charge @ Vgs (nC) | [email protected] |
| Maximum Gate-Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 13 |
| Typical Turn-On Delay Time (ns) | 83 |
| Maximum Drain-Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.5 |
| Typical Turn-Off Delay Time (ns) | 786 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Typical Diode Forward Voltage (V) | 0.76 |
| Typical Gate to Drain Charge (nC) | 0.4 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Minimum Gate Threshold Voltage (V) | 0.6 |
| Typical Gate Threshold Voltage (V) | 0.92 |
| Typical Gate to Source Charge (nC) | 0.2 |
| Typical Reverse Recovery Time (ns) | 410 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.91 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 33@20V |
| Maximum Drain-Source Resistance (mOhm) | [email protected] |
| Maximum Gate-Source Leakage Current (nA) | 10000 |
| Maximum Positive Gate-Source Voltage (V) | 12 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 1.2 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | [email protected]|[email protected] |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2.8@20V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 458 |
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