onsemi NTJD4001NT1G
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Manufacturer
Manufacturer No
NTJD4001NT1G
Date Code
23+
Quantity
4,389
Availability
In Stock
Package
SC-88
Packaging
Tape and Reel
Description
Trans MOSFET N-CH 30V 0.25A 6-Pin SC-88 T/R
Detailed Description
If you need to either amplify or switch between signals in your design, then ON Semiconductor's NTJD4001NT1G power MOSFET is for you. Its maximum power dissipation is 272 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Datasheet
Payment
Delivery
HTS
COMPONENTS
PPAP
No
EU RoHS
Compliant
Category
Small Signal
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
6
Automotive
No
Lead Shape
Gull-wing
PCB changed
6
Availability
In Stock (cut strips)
Channel Mode
Enhancement
Channel Type
N
Configuration
Dual
Package Width
1.25
Package Height
0.9
Package Length
2
Supplier Package
SC-88
Maximum IDSS (uA)
1
Standard Package Name
SOT
Manufacturer Lead Time
44 weeks
Typical Fall Time (ns)
82
Typical Rise Time (ns)
23
Number of Elements per Chip
2
Maximum Power Dissipation (mW)
272
Typical Gate Charge @ Vgs (nC)
0.9@5V
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
19
Typical Turn-On Delay Time (ns)
17
Maximum Drain-Source Voltage (V)
30
Typical Gate Plateau Voltage (V)
2.3
Typical Turn-Off Delay Time (ns)
94
Maximum Diode Forward Voltage (V)
0.7
Typical Diode Forward Voltage (V)
0.65
Typical Gate to Drain Charge (nC)
0.2
Maximum Gate Threshold Voltage (V)
1.5
Minimum Gate Threshold Voltage (V)
0.8
Typical Gate Threshold Voltage (V)
1.2
Typical Gate to Source Charge (nC)
0.3
Typical Reverse Recovery Time (ns)
12.4
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
0.25
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
20@5V
Maximum Drain-Source Resistance (mOhm)
1500@4V
Maximum Gate-Source Leakage Current (nA)
1000
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
0.6
Typical Drain-Source Resistance @ 25°C (mOhm)
1000@4V|[email protected]
Maximum Power Dissipation on PCB @ TC=25°C (W)
0.272
Typical Reverse Transfer Capacitance @ Vds (pF)
7.25@5V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
0.25
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
458
| Attribute | Value |
|---|---|
| HTS | COMPONENTS |
| PPAP | No |
| EU RoHS | Compliant |
| Category | Small Signal |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Availability | In Stock (cut strips) |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 1.25 |
| Package Height | 0.9 |
| Package Length | 2 |
| Supplier Package | SC-88 |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SOT |
| Manufacturer Lead Time | 44 weeks |
| Typical Fall Time (ns) | 82 |
| Typical Rise Time (ns) | 23 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 272 |
| Typical Gate Charge @ Vgs (nC) | 0.9@5V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 19 |
| Typical Turn-On Delay Time (ns) | 17 |
| Maximum Drain-Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 2.3 |
| Typical Turn-Off Delay Time (ns) | 94 |
| Maximum Diode Forward Voltage (V) | 0.7 |
| Typical Diode Forward Voltage (V) | 0.65 |
| Typical Gate to Drain Charge (nC) | 0.2 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Minimum Gate Threshold Voltage (V) | 0.8 |
| Typical Gate Threshold Voltage (V) | 1.2 |
| Typical Gate to Source Charge (nC) | 0.3 |
| Typical Reverse Recovery Time (ns) | 12.4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.25 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 20@5V |
| Maximum Drain-Source Resistance (mOhm) | 1500@4V |
| Maximum Gate-Source Leakage Current (nA) | 1000 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 0.6 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 1000@4V|[email protected] |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.272 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 7.25@5V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.25 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 458 |
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