onsemi NTJD4158CT1G
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Manufacturer
Manufacturer No
NTJD4158CT1G
Date Code
24+
Quantity
400
Availability
In Stock
Package
SC-88
Packaging
Tape and Reel
Description
Trans MOSFET N/P-CH 30V/20V 0.25A/0.88A 6-Pin SC-88 T/R
Detailed Description
This NTJD4158CT1G power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 270 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes tmos technology. This N|P channel MOSFET transistor operates in enhancement mode.
Datasheet
Payment
Delivery
HTS
8541.29.00.55
PPAP
No
EU RoHS
Compliant
Category
Small Signal
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
6
Automotive
No
Lead Shape
Gull-wing
PCB changed
6
Availability
In Stock (cut strips)
Channel Mode
Enhancement
Channel Type
N|P
Configuration
Dual
Package Width
1.25
Package Height
0.9
Package Length
2
Supplier Package
SC-88
Maximum IDSS (uA)
1
Standard Package Name
SOT
Manufacturer Lead Time
44 weeks
Typical Fall Time (ns)
78@N Channel|3.5@P Channel
Typical Rise Time (ns)
66@N Channel|6.5@P Channel
Number of Elements per Chip
2
Maximum Power Dissipation (mW)
270
Typical Gate Charge @ Vgs (nC)
0.9@5V@N Channel|[email protected]@P Channel
Maximum Gate-Source Voltage (V)
±20@N Channel|±12@P Channel
Typical Output Capacitance (pF)
19@N Channel|25@P Channel
Typical Turn-On Delay Time (ns)
15@N Channel|5.8@P Channel
Maximum Drain-Source Voltage (V)
30@N Channel|20@P Channel
Typical Gate Plateau Voltage (V)
2.3@N Channel|2@P Channel
Typical Turn-Off Delay Time (ns)
56@N Channel|13.5@P Channel
Maximum Diode Forward Voltage (V)
0.7@N Channel|1.2@P Channel
Typical Diode Forward Voltage (V)
0.65@N Channel|0.8@P Channel
Typical Gate to Drain Charge (nC)
0.2@N Channel|0.65@P Channel
Maximum Gate Threshold Voltage (V)
1.5
Minimum Gate Threshold Voltage (V)
0.8@N Channel|0.45@P Channel
Typical Gate Threshold Voltage (V)
1.2@N Channel|0.61@P Channel
Typical Gate to Source Charge (nC)
0.3@N Channel|0.5@P Channel
Typical Reverse Recovery Time (ns)
12.4@N Channel|10.6@P Channel
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
0.25@N Channel|0.88@P Channel
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
20@5V@N Channel|155@20V@P Channel
Maximum Drain-Source Resistance (mOhm)
[email protected]@N Channel|[email protected]@P Channel
Maximum Gate-Source Leakage Current (nA)
1000
Maximum Positive Gate-Source Voltage (V)
20@N Channel|12@P Channel
Maximum Pulsed Drain Current @ TC=25°C (A)
0.5@N Channel|3@P Channel
Typical Drain-Source Resistance @ 25°C (mOhm)
Maximum Power Dissipation on PCB @ TC=25°C (W)
0.27
Typical Reverse Transfer Capacitance @ Vds (pF)
7.25@5V@N Channel|18@20V@P Channel
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
0.25@N Channel|0.88@P Channel
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
460
| Attribute | Value |
|---|---|
| HTS | 8541.29.00.55 |
| PPAP | No |
| EU RoHS | Compliant |
| Category | Small Signal |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Availability | In Stock (cut strips) |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 1.25 |
| Package Height | 0.9 |
| Package Length | 2 |
| Supplier Package | SC-88 |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SOT |
| Manufacturer Lead Time | 44 weeks |
| Typical Fall Time (ns) | 78@N Channel|3.5@P Channel |
| Typical Rise Time (ns) | 66@N Channel|6.5@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 270 |
| Typical Gate Charge @ Vgs (nC) | 0.9@5V@N Channel|[email protected]@P Channel |
| Maximum Gate-Source Voltage (V) | ±20@N Channel|±12@P Channel |
| Typical Output Capacitance (pF) | 19@N Channel|25@P Channel |
| Typical Turn-On Delay Time (ns) | 15@N Channel|5.8@P Channel |
| Maximum Drain-Source Voltage (V) | 30@N Channel|20@P Channel |
| Typical Gate Plateau Voltage (V) | 2.3@N Channel|2@P Channel |
| Typical Turn-Off Delay Time (ns) | 56@N Channel|13.5@P Channel |
| Maximum Diode Forward Voltage (V) | 0.7@N Channel|1.2@P Channel |
| Typical Diode Forward Voltage (V) | 0.65@N Channel|0.8@P Channel |
| Typical Gate to Drain Charge (nC) | 0.2@N Channel|0.65@P Channel |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Minimum Gate Threshold Voltage (V) | 0.8@N Channel|0.45@P Channel |
| Typical Gate Threshold Voltage (V) | 1.2@N Channel|0.61@P Channel |
| Typical Gate to Source Charge (nC) | 0.3@N Channel|0.5@P Channel |
| Typical Reverse Recovery Time (ns) | 12.4@N Channel|10.6@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.25@N Channel|0.88@P Channel |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 20@5V@N Channel|155@20V@P Channel |
| Maximum Drain-Source Resistance (mOhm) | [email protected]@N Channel|[email protected]@P Channel |
| Maximum Gate-Source Leakage Current (nA) | 1000 |
| Maximum Positive Gate-Source Voltage (V) | 20@N Channel|12@P Channel |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 0.5@N Channel|3@P Channel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | [email protected]|[email protected]@N Channel|[email protected]|[email protected]@P Channel |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.27 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 7.25@5V@N Channel|18@20V@P Channel |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.25@N Channel|0.88@P Channel |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 460 |
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