10-13 NOV 2026 · Munich, Germany

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Microchip Technology MSCSM120TAM11CTPAG

Microchip Technology MSCSM120TAM11CTPAG electronic component product image

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Manufacturer No
MSCSM120TAM11CTPAG
Availability
In Stock
Package
Module
Packaging
Tube
Description
MOSFET 6N-CH 1200V 251A SP6-P
Detailed Description
Mosfet Array 1200V (1.2kV) 251A (Tc) 1042W (Tc) Chassis Mount SP6-P
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Series
-
Packaging
Tube
Technology
Silicon Carbide (SiC)
FET Feature
-
Power - Max
1042W (Tc)
Manufacturer
Microchip Technology
Configuration
6 N-Channel (3-Phase Bridge)
Mounting Type
Chassis Mount
Package / Case
Module
Vgs(th) (Max) @ Id
2.8V @ 3mA
Base Product Number
MSCSM120
Operating Temperature
-40°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
10.4mOhm @ 120A, 20V
Supplier Device Package
SP6-P
Gate Charge (Qg) (Max) @ Vgs
696nC @ 20V
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds
9060pF @ 1000V
Current - Continuous Drain (Id) @ 25°C
251A (Tc)
AttributeValue
Series-
PackagingTube
TechnologySilicon Carbide (SiC)
FET Feature-
Power - Max1042W (Tc)
ManufacturerMicrochip Technology
Configuration6 N-Channel (3-Phase Bridge)
Mounting TypeChassis Mount
Package / CaseModule
Vgs(th) (Max) @ Id2.8V @ 3mA
Base Product NumberMSCSM120
Operating Temperature-40°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs10.4mOhm @ 120A, 20V
Supplier Device PackageSP6-P
Gate Charge (Qg) (Max) @ Vgs696nC @ 20V
Drain to Source Voltage (Vdss)1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds9060pF @ 1000V
Current - Continuous Drain (Id) @ 25°C251A (Tc)

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