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Fairchild Semiconductor NDS9936

Fairchild Semiconductor NDS9936 electronic component product image

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Manufacturer No
NDS9936
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
Bulk
Description
MOSFET 2N-CH 30V 5A 8SOIC
Detailed Description
Mosfet Array 30V 5A 900mW Surface Mount 8-SOIC
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Series
-
Packaging
Bulk
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate
Power - Max
900mW
Manufacturer
Fairchild Semiconductor
Configuration
2 N-Channel (Dual)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
3V @ 250µA
Base Product Number
NDS993
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
50mOhm @ 5A, 10V
Supplier Device Package
8-SOIC
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
525pF @ 15V
Current - Continuous Drain (Id) @ 25°C
5A
AttributeValue
Series-
PackagingBulk
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Power - Max900mW
ManufacturerFairchild Semiconductor
Configuration2 N-Channel (Dual)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id3V @ 250µA
Base Product NumberNDS993
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs50mOhm @ 5A, 10V
Supplier Device Package8-SOIC
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds525pF @ 15V
Current - Continuous Drain (Id) @ 25°C5A

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