10-13 NOV 2026 · Munich, Germany

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Fairchild Semiconductor FDC6308P

Fairchild Semiconductor FDC6308P electronic component product image

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Manufacturer No
FDC6308P
Availability
In Stock
Package
SOT-23-6 Thin, TSOT-23-6
Packaging
Bulk
Description
MOSFET 2P-CH 20V 1.7A SSOT6
Detailed Description
Mosfet Array 20V 1.7A (Ta) 700mW (Ta) Surface Mount SuperSOT™-6
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Series
PowerTrench®
Packaging
Bulk
Technology
-
FET Feature
-
Power - Max
700mW (Ta)
Manufacturer
Fairchild Semiconductor
Configuration
2 P-Channel (Dual)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id
1.5V @ 250µA
Base Product Number
FDC6308
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
180mOhm @ 1.7A, 4.5V
Supplier Device Package
SuperSOT™-6
Gate Charge (Qg) (Max) @ Vgs
5nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
265pF @ 10V
Current - Continuous Drain (Id) @ 25°C
1.7A (Ta)
AttributeValue
SeriesPowerTrench®
PackagingBulk
Technology-
FET Feature-
Power - Max700mW (Ta)
ManufacturerFairchild Semiconductor
Configuration2 P-Channel (Dual)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id1.5V @ 250µA
Base Product NumberFDC6308
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs180mOhm @ 1.7A, 4.5V
Supplier Device PackageSuperSOT™-6
Gate Charge (Qg) (Max) @ Vgs5nC @ 4.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds265pF @ 10V
Current - Continuous Drain (Id) @ 25°C1.7A (Ta)

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