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Fairchild Semiconductor FDW2508P

Fairchild Semiconductor FDW2508P electronic component product image

Image is only for reference

Manufacturer No
FDW2508P
Package
8-TSSOP (0.173", 4.40mm Width)
Packaging
Bulk
Description
MOSFET 2P-CH 12V 6A 8TSSOP
Detailed Description
Mosfet Array 12V 6A 1W Surface Mount 8-TSSOP
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Series
PowerTrench®
Packaging
Bulk
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate
Power - Max
1W
Manufacturer
Fairchild Semiconductor
Configuration
2 P-Channel (Dual)
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Vgs(th) (Max) @ Id
1.5V @ 250µA
Base Product Number
FDW25
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
18mOhm @ 6A, 4.5V
Supplier Device Package
8-TSSOP
Gate Charge (Qg) (Max) @ Vgs
36nC @ 4.5V
Drain to Source Voltage (Vdss)
12V
Input Capacitance (Ciss) (Max) @ Vds
2644pF @ 6V
Current - Continuous Drain (Id) @ 25°C
6A
AttributeValue
SeriesPowerTrench®
PackagingBulk
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Power - Max1W
ManufacturerFairchild Semiconductor
Configuration2 P-Channel (Dual)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Vgs(th) (Max) @ Id1.5V @ 250µA
Base Product NumberFDW25
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs18mOhm @ 6A, 4.5V
Supplier Device Package8-TSSOP
Gate Charge (Qg) (Max) @ Vgs36nC @ 4.5V
Drain to Source Voltage (Vdss)12V
Input Capacitance (Ciss) (Max) @ Vds2644pF @ 6V
Current - Continuous Drain (Id) @ 25°C6A

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Packaging Process