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Fairchild Semiconductor FDMA1025P

Fairchild Semiconductor FDMA1025P electronic component product image

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Manufacturer No
FDMA1025P
Package
6-VDFN Exposed Pad
Packaging
Bulk
Description
MOSFET 2P-CH 20V 3.1A 6MICROFET
Detailed Description
Mosfet Array 20V 3.1A 700mW Surface Mount 6-MicroFET (2x2)
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Series
PowerTrench®
Packaging
Bulk
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate
Power - Max
700mW
Manufacturer
Fairchild Semiconductor
Configuration
2 P-Channel (Dual)
Mounting Type
Surface Mount
Package / Case
6-VDFN Exposed Pad
Vgs(th) (Max) @ Id
1.5V @ 250µA
Base Product Number
FDMA1025
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
155mOhm @ 3.1A, 4.5V
Supplier Device Package
6-MicroFET (2x2)
Gate Charge (Qg) (Max) @ Vgs
4.8nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
450pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3.1A
AttributeValue
SeriesPowerTrench®
PackagingBulk
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Power - Max700mW
ManufacturerFairchild Semiconductor
Configuration2 P-Channel (Dual)
Mounting TypeSurface Mount
Package / Case6-VDFN Exposed Pad
Vgs(th) (Max) @ Id1.5V @ 250µA
Base Product NumberFDMA1025
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs155mOhm @ 3.1A, 4.5V
Supplier Device Package6-MicroFET (2x2)
Gate Charge (Qg) (Max) @ Vgs4.8nC @ 4.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds450pF @ 10V
Current - Continuous Drain (Id) @ 25°C3.1A

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