Wolfspeed, Inc. C3M0021120K
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Manufacturer
Manufacturer No
C3M0021120K
Quantity
152
Availability
In Stock
Package
TO-247
Packaging
Tube
Description
Trans MOSFET N-CH SiC 1.2KV 100A 4-Pin(4+Tab) TO-247 Tube
Datasheet
Payment
Delivery
HTS
8541.29.00.55
Tab
Tab
PPAP
No
SVHC
Yes
EU RoHS
Compliant with Exemption
Category
Power MOSFET
Material
SiC
Mounting
Through Hole
ECCN (US)
EAR99
Packaging
Tube
Pin Count
4
Automotive
No
Lead Shape
Through Hole
PCB changed
4
Availability
In Stock
Channel Mode
Enhancement
Channel Type
N
Configuration
Single Dual Source
Package Width
5.02
Package Height
23.47
Package Length
15.94
Supplier Package
TO-247
Maximum IDSS (uA)
50
Standard Package Name
TO
Manufacturer Lead Time
20 weeks
SVHC Exceeds Threshold
Yes
Typical Fall Time (ns)
14
Typical Rise Time (ns)
33
Supplier Temperature Grade
Industrial
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
469000
Typical Gate Charge @ Vgs (nC)
162@15V
Maximum Gate-Source Voltage (V)
19
Typical Output Capacitance (pF)
180
Typical Turn-On Delay Time (ns)
29
Maximum Drain-Source Voltage (V)
1200
Typical Turn-Off Delay Time (ns)
57
Typical Diode Forward Voltage (V)
4.6
Typical Gate to Drain Charge (nC)
50
Maximum Gate Threshold Voltage (V)
3.6
Minimum Gate Threshold Voltage (V)
1.8
Typical Gate Threshold Voltage (V)
2.5
Typical Gate to Source Charge (nC)
49
Typical Reverse Recovery Time (ns)
34
Maximum Operating Temperature (°C)
175
Minimum Operating Temperature (°C)
-40
Maximum Continuous Drain Current (A)
100
Operating Junction Temperature (°C)
-40 to 175
Typical Input Capacitance @ Vds (pF)
4818@1000V
Typical Reverse Recovery Charge (nC)
928
Maximum Drain-Source Resistance (mOhm)
28.8@15V
Maximum Gate-Source Leakage Current (nA)
250
Maximum Positive Gate-Source Voltage (V)
19
Maximum Pulsed Drain Current @ TC=25°C (A)
200
Typical Reverse Transfer Capacitance @ Vds (pF)
12@1000V
| Attribute | Value |
|---|---|
| HTS | 8541.29.00.55 |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Category | Power MOSFET |
| Material | SiC |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 4 |
| Availability | In Stock |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Source |
| Package Width | 5.02 |
| Package Height | 23.47 |
| Package Length | 15.94 |
| Supplier Package | TO-247 |
| Maximum IDSS (uA) | 50 |
| Standard Package Name | TO |
| Manufacturer Lead Time | 20 weeks |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 14 |
| Typical Rise Time (ns) | 33 |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 469000 |
| Typical Gate Charge @ Vgs (nC) | 162@15V |
| Maximum Gate-Source Voltage (V) | 19 |
| Typical Output Capacitance (pF) | 180 |
| Typical Turn-On Delay Time (ns) | 29 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Typical Turn-Off Delay Time (ns) | 57 |
| Typical Diode Forward Voltage (V) | 4.6 |
| Typical Gate to Drain Charge (nC) | 50 |
| Maximum Gate Threshold Voltage (V) | 3.6 |
| Minimum Gate Threshold Voltage (V) | 1.8 |
| Typical Gate Threshold Voltage (V) | 2.5 |
| Typical Gate to Source Charge (nC) | 49 |
| Typical Reverse Recovery Time (ns) | 34 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 100 |
| Operating Junction Temperature (°C) | -40 to 175 |
| Typical Input Capacitance @ Vds (pF) | 4818@1000V |
| Typical Reverse Recovery Charge (nC) | 928 |
| Maximum Drain-Source Resistance (mOhm) | 28.8@15V |
| Maximum Gate-Source Leakage Current (nA) | 250 |
| Maximum Positive Gate-Source Voltage (V) | 19 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 200 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 12@1000V |
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