Vishay SI4128DY-T1-GE3
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Manufacturer
Manufacturer No
SI4128DY-T1-GE3
Quantity
365
Availability
In Stock
Package
SOIC N
Packaging
Tape and Reel
Description
Trans MOSFET N-CH 30V 10.9A 8-Pin SOIC N T/R
Detailed Description
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SI4128DY-T1-GE3 power MOSFET. Its maximum power dissipation is 2400 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Datasheet
Payment
Delivery
HTS
COMPONENTS
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
8
Automotive
No
Lead Shape
Gull-wing
PCB changed
8
Availability
In Stock
Channel Mode
Enhancement
Channel Type
N
Configuration
Single Quad Drain Triple Source
Package Width
4(Max)
Package Height
1.55(Max)
Package Length
5(Max)
Supplier Package
SOIC N
Maximum IDSS (uA)
1
Process Technology
0.18um
Standard Package Name
SO
Manufacturer Lead Time
52 weeks
Typical Fall Time (ns)
10
Typical Rise Time (ns)
10|12
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
2400
Typical Gate Charge @ 10V (nC)
8
Typical Gate Charge @ Vgs (nC)
[email protected]|8@10V
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
95
Typical Turn-On Delay Time (ns)
15|5
Maximum Drain-Source Voltage (V)
30
Typical Turn-Off Delay Time (ns)
13|15
Typical Gate to Drain Charge (nC)
1.1
Maximum Gate Threshold Voltage (V)
2.5
Typical Gate to Source Charge (nC)
1.4
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
10.9
Typical Input Capacitance @ Vds (pF)
435@15V
Typical Reverse Recovery Charge (nC)
7
Maximum Drain-Source Resistance (mOhm)
24@10V
Maximum Gate-Source Leakage Current (nA)
100
Typical Drain-Source Resistance @ 25°C (mOhm)
20@10V|[email protected]
| Attribute | Value |
|---|---|
| HTS | COMPONENTS |
| PPAP | No |
| EU RoHS | Compliant |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Availability | In Stock |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 4(Max) |
| Package Height | 1.55(Max) |
| Package Length | 5(Max) |
| Supplier Package | SOIC N |
| Maximum IDSS (uA) | 1 |
| Process Technology | 0.18um |
| Standard Package Name | SO |
| Manufacturer Lead Time | 52 weeks |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 10|12 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2400 |
| Typical Gate Charge @ 10V (nC) | 8 |
| Typical Gate Charge @ Vgs (nC) | [email protected]|8@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 95 |
| Typical Turn-On Delay Time (ns) | 15|5 |
| Maximum Drain-Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 13|15 |
| Typical Gate to Drain Charge (nC) | 1.1 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Typical Gate to Source Charge (nC) | 1.4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 10.9 |
| Typical Input Capacitance @ Vds (pF) | 435@15V |
| Typical Reverse Recovery Charge (nC) | 7 |
| Maximum Drain-Source Resistance (mOhm) | 24@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 20@10V|[email protected] |
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