10-13 NOV 2026 · Munich, Germany

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Vishay SI4124DY-T1-GE3

Vishay SI4124DY-T1-GE3 electronic component product image

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Manufacturer
Manufacturer No
SI4124DY-T1-GE3
Quantity
2,200
Availability
In Stock
Package
SOIC N
Packaging
Tape and Reel
Description
Trans MOSFET N-CH 40V 20.5A 8-Pin SOIC N T/R
Detailed Description
If you need to either amplify or switch between signals in your design, then Vishay's SI4124DY-T1-GE3 power MOSFET is for you. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.55
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
8
Automotive
No
Lead Shape
Gull-wing
PCB changed
8
Availability
In Stock (cut strips)
Channel Mode
Enhancement
Channel Type
N
Configuration
Single Quad Drain Triple Source
Package Width
4(Max)
Package Height
1.55(Max)
Package Length
5(Max)
Supplier Package
SOIC N
Standard Package Name
SO
Manufacturer Lead Time
52 weeks
Typical Fall Time (ns)
11
Typical Rise Time (ns)
14
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
2500
Typical Gate Charge @ 10V (nC)
51
Typical Gate Charge @ Vgs (nC)
Maximum Gate-Source Voltage (V)
±20
Typical Turn-On Delay Time (ns)
30
Maximum Drain-Source Voltage (V)
40
Typical Turn-Off Delay Time (ns)
38
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
20.5
Typical Input Capacitance @ Vds (pF)
3540@20V
Maximum Drain-Source Resistance (mOhm)
7.5@10V
AttributeValue
HTS8541.29.00.55
PPAPNo
EU RoHSCompliant
CategoryPower MOSFET
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
AvailabilityIn Stock (cut strips)
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Supplier PackageSOIC N
Standard Package NameSO
Manufacturer Lead Time52 weeks
Typical Fall Time (ns)11
Typical Rise Time (ns)14
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)51
Typical Gate Charge @ Vgs (nC)[email protected]|51@10V
Maximum Gate-Source Voltage (V)±20
Typical Turn-On Delay Time (ns)30
Maximum Drain-Source Voltage (V)40
Typical Turn-Off Delay Time (ns)38
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)20.5
Typical Input Capacitance @ Vds (pF)3540@20V
Maximum Drain-Source Resistance (mOhm)7.5@10V

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Packaging Process