10-13 NOV 2026 · Munich, Germany

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Vishay SI2377EDS-T1-GE3

Vishay SI2377EDS-T1-GE3 electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
SI2377EDS-T1-GE3
Quantity
960
Availability
In Stock
Package
SOT-23
Packaging
Tape and Reel
Description
Trans MOSFET P-CH 20V 4.4A 3-Pin SOT-23 T/R
Detailed Description
Compared to traditional transistors, SI2377EDS-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1250 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.55
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
3
Automotive
No
Lead Shape
Gull-wing
PCB changed
3
Availability
In Stock
Channel Mode
Enhancement
Channel Type
P
Configuration
Single
Package Width
1.4(Max)
Package Height
1.02(Max)
Package Length
3.04(Max)
Supplier Package
SOT-23
Standard Package Name
SOT
Manufacturer Lead Time
52 weeks
Typical Fall Time (ns)
2000|2300
Typical Rise Time (ns)
1000|400
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
1250
Typical Gate Charge @ Vgs (nC)
Maximum Gate-Source Voltage (V)
±8
Typical Turn-On Delay Time (ns)
200|90
Maximum Drain-Source Voltage (V)
20
Typical Turn-Off Delay Time (ns)
4000|5200
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
4.4
Maximum Drain-Source Resistance (mOhm)
AttributeValue
HTS8541.29.00.55
PPAPNo
EU RoHSCompliant
CategoryPower MOSFET
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
AvailabilityIn Stock
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Supplier PackageSOT-23
Standard Package NameSOT
Manufacturer Lead Time52 weeks
Typical Fall Time (ns)2000|2300
Typical Rise Time (ns)1000|400
Number of Elements per Chip1
Maximum Power Dissipation (mW)1250
Typical Gate Charge @ Vgs (nC)[email protected]|14@8V
Maximum Gate-Source Voltage (V)±8
Typical Turn-On Delay Time (ns)200|90
Maximum Drain-Source Voltage (V)20
Typical Turn-Off Delay Time (ns)4000|5200
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.4
Maximum Drain-Source Resistance (mOhm)[email protected]

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