10-13 NOV 2026 · Munich, Germany

MEET FIXCHIPS (C3-161) AT electronica 2026

Vishay SI2371EDS-T1-GE3

Vishay SI2371EDS-T1-GE3 electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
SI2371EDS-T1-GE3
Date Code
18+
Quantity
470
Availability
In Stock
Package
SOT-23
Packaging
Tape and Reel
Description
Trans MOSFET P-CH 30V 4.8A 3-Pin SOT-23 T/R
Detailed Description
In addition to amplifying electronic signals, you'll be able to switch between various lines with the SI2371EDS-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 1000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
COMPONENTS
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
3
Automotive
No
Lead Shape
Gull-wing
PCB changed
3
Availability
In Stock (cut strips)
Channel Mode
Enhancement
Channel Type
P
Configuration
Single
Package Width
1.4(Max)
Package Height
1.02(Max)
Package Length
3.04(Max)
Supplier Package
SOT-23
Maximum IDSS (uA)
1
Standard Package Name
SOT
Typical Fall Time (ns)
62|52
Typical Rise Time (ns)
65|8
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
1000
Typical Gate Charge @ 10V (nC)
22.8
Typical Gate Charge @ Vgs (nC)
Maximum Gate-Source Voltage (V)
±12
Typical Turn-On Delay Time (ns)
28|7
Maximum Drain-Source Voltage (V)
30
Typical Turn-Off Delay Time (ns)
47|52
Maximum Gate Threshold Voltage (V)
1.5
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
4.8
Maximum Drain-Source Resistance (mOhm)
45@10V
Maximum Gate-Source Leakage Current (nA)
10000
AttributeValue
HTSCOMPONENTS
PPAPNo
EU RoHSCompliant
CategoryPower MOSFET
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
AvailabilityIn Stock (cut strips)
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Supplier PackageSOT-23
Maximum IDSS (uA)1
Standard Package NameSOT
Typical Fall Time (ns)62|52
Typical Rise Time (ns)65|8
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Typical Gate Charge @ 10V (nC)22.8
Typical Gate Charge @ Vgs (nC)[email protected]|22.8@10V
Maximum Gate-Source Voltage (V)±12
Typical Turn-On Delay Time (ns)28|7
Maximum Drain-Source Voltage (V)30
Typical Turn-Off Delay Time (ns)47|52
Maximum Gate Threshold Voltage (V)1.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.8
Maximum Drain-Source Resistance (mOhm)45@10V
Maximum Gate-Source Leakage Current (nA)10000

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