onsemi NXH022S120M3F1PTG
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| Attribute | Value |
|---|---|
| Grade | - |
| Series | - |
| Packaging | Tray |
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Power - Max | 116W |
| Manufacturer | onsemi |
| Configuration | 6 N-Channel (Full Bridge) |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 4.4V @ 20mA |
| Base Product Number | NXH022 |
| Operating Temperature | -40°C ~ 175°C |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 50A, 18V |
| Supplier Device Package | - |
| Gate Charge (Qg) (Max) @ Vgs | 138nC @ 18V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 3246pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
Purchase & Inquiry
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Packaging Process
