10-13 NOV 2026 · Munich, Germany

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onsemi NXH020F120MNF1PG

onsemi NXH020F120MNF1PG electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
NXH020F120MNF1PG
Package
Module
Packaging
Tray
Description
MOSFET 4N-CH 1200V 51A 22PIM
Detailed Description
Mosfet Array 1200V (1.2kV) 51A (Tc) 119W (Tj) Chassis Mount 22-PIM (33.8x42.5)
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Series
-
Packaging
Tray
Technology
Silicon Carbide (SiC)
FET Feature
-
Power - Max
119W (Tj)
Manufacturer
onsemi
Configuration
4 N-Channel (Full Bridge)
Mounting Type
Chassis Mount
Package / Case
Module
Vgs(th) (Max) @ Id
4.3V @ 20mA
Base Product Number
NXH020
Operating Temperature
-40°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
30mOhm @ 50A, 20V
Supplier Device Package
22-PIM (33.8x42.5)
Gate Charge (Qg) (Max) @ Vgs
213.5nC @ 20V
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds
2420pF @ 800V
Current - Continuous Drain (Id) @ 25°C
51A (Tc)
AttributeValue
Series-
PackagingTray
TechnologySilicon Carbide (SiC)
FET Feature-
Power - Max119W (Tj)
Manufactureronsemi
Configuration4 N-Channel (Full Bridge)
Mounting TypeChassis Mount
Package / CaseModule
Vgs(th) (Max) @ Id4.3V @ 20mA
Base Product NumberNXH020
Operating Temperature-40°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs30mOhm @ 50A, 20V
Supplier Device Package22-PIM (33.8x42.5)
Gate Charge (Qg) (Max) @ Vgs213.5nC @ 20V
Drain to Source Voltage (Vdss)1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds2420pF @ 800V
Current - Continuous Drain (Id) @ 25°C51A (Tc)

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Packaging Process