10-13 NOV 2026 · Munich, Germany

MEET FIXCHIPS (C3-161) AT electronica 2026

onsemi FDMC8884

onsemi FDMC8884 electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
FDMC8884
Date Code
13+
Quantity
2,988
Availability
In Stock
Package
WDFN EP
Packaging
Tape and Reel
Description
Trans MOSFET N-CH Si 30V 9A 8-Pin WDFN EP T/R
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
COMPONENTS
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Material
Si
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
8
Automotive
No
Lead Shape
No Lead
PCB changed
8
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single Quad Drain Triple Source
Package Width
3.3
Package Height
0.73
Package Length
3.3
Supplier Package
WDFN EP
Process Technology
TMOS
Standard Package Name
DFN
Typical Fall Time (ns)
2
Typical Rise Time (ns)
2
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
2300
Typical Gate Charge @ 10V (nC)
10
Typical Gate Charge @ Vgs (nC)
Maximum Gate-Source Voltage (V)
±20
Typical Turn-On Delay Time (ns)
6
Maximum Drain-Source Voltage (V)
30
Typical Turn-Off Delay Time (ns)
15
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
9
Typical Input Capacitance @ Vds (pF)
513@15V
Maximum Drain-Source Resistance (mOhm)
19@10V
AttributeValue
HTSCOMPONENTS
PPAPNo
EU RoHSCompliant
CategoryPower MOSFET
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height0.73
Package Length3.3
Supplier PackageWDFN EP
Process TechnologyTMOS
Standard Package NameDFN
Typical Fall Time (ns)2
Typical Rise Time (ns)2
Number of Elements per Chip1
Maximum Power Dissipation (mW)2300
Typical Gate Charge @ 10V (nC)10
Typical Gate Charge @ Vgs (nC)[email protected]|10@10V
Maximum Gate-Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6
Maximum Drain-Source Voltage (V)30
Typical Turn-Off Delay Time (ns)15
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Typical Input Capacitance @ Vds (pF)513@15V
Maximum Drain-Source Resistance (mOhm)19@10V

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