10-13 NOV 2026 · Munich, Germany

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onsemi FDMC86262P

onsemi FDMC86262P electronic component product image

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Manufacturer
Manufacturer No
FDMC86262P
Date Code
19+
Quantity
3,000
Availability
In Stock
Package
8-PowerWDFN
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET P-CH 150V 2A/8.4A 8MLP
Detailed Description
P-Channel 150 V 2A (Ta), 8.4A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-MLP (3.3x3.3)
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mfr
onsemi
Grade
-
Series
PowerTrench®
FET Type
P-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT)
Vgs (Max)
±25V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Surface Mount
Qualification
-
Package / Case
8-PowerWDFN
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
FDMC86262
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
307mOhm @ 2A, 10V
Power Dissipation (Max)
2.3W (Ta), 40W (Tc)
Supplier Device Package
8-MLP (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Drain to Source Voltage (Vdss)
150 V
Input Capacitance (Ciss) (Max) @ Vds
885 pF @ 75 V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Current - Continuous Drain (Id) @ 25°C
2A (Ta), 8.4A (Tc)
AttributeValue
Mfronsemi
Grade-
SeriesPowerTrench®
FET TypeP-Channel
PackagingTape & Reel (TR); Cut Tape (CT)
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
FET Feature-
Mounting TypeSurface Mount
Qualification-
Package / Case8-PowerWDFN
Vgs(th) (Max) @ Id4V @ 250µA
Base Product NumberFDMC86262
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs307mOhm @ 2A, 10V
Power Dissipation (Max)2.3W (Ta), 40W (Tc)
Supplier Device Package8-MLP (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Drain to Source Voltage (Vdss)150 V
Input Capacitance (Ciss) (Max) @ Vds885 pF @ 75 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C2A (Ta), 8.4A (Tc)

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