Microchip Technology VN0606L-G

Microchip Technology VN0606L-G electronic component product image

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Manufacturer No
VN0606L-G
Availability
In Stock
Package
TO-226-3, TO-92-3 (TO-226AA)
Packaging
Bag
Description
MOSFET N-CH 60V 330MA TO92-3
Detailed Description
N-Channel 60 V 330mA (Tj) 1W (Tc) Through Hole TO-92-3
Datasheet
Payment
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Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mfr
Microchip Technology
Grade
-
Series
-
FET Type
N-Channel
Packaging
Bag
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Through Hole
Qualification
-
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Vgs(th) (Max) @ Id
2V @ 1mA
Base Product Number
VN0606
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
3Ohm @ 1A, 10V
Power Dissipation (Max)
1W (Tc)
Supplier Device Package
TO-92-3
Drain to Source Voltage (Vdss)
60 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
330mA (Tj)
AttributeValue
MfrMicrochip Technology
Grade-
Series-
FET TypeN-Channel
PackagingBag
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
FET Feature-
Mounting TypeThrough Hole
Qualification-
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Vgs(th) (Max) @ Id2V @ 1mA
Base Product NumberVN0606
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs3Ohm @ 1A, 10V
Power Dissipation (Max)1W (Tc)
Supplier Device PackageTO-92-3
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C330mA (Tj)

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Packaging Process

Product before packing
Step1: Product
Product in vacuum packaging
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-Static Bag
Individual packaging box
Step4: Package Boxes
Packaging box with shipping label
Step5: Bar-Code Shipping Tags
Shipping by cargo vessel
Step6: Shipping