Microchip Technology MSC017SMA120J

Microchip Technology MSC017SMA120J electronic component product image

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Manufacturer No
MSC017SMA120J
Availability
In Stock
Packaging
Bulk
Description
MOSFET SIC 1200V 17 MOHM SOT-227
Detailed Description
N-Channel 1200 V 88A (Tc) 278W (Tc) SOT-227
Datasheet
Payment
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Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mfr
Microchip Technology
Grade
-
Series
MSiC™ MA
FET Type
N-Channel
Packaging
Bulk
Vgs (Max)
+23V, -10V
Technology
SiCFET (Silicon Carbide)
Qualification
-
Vgs(th) (Max) @ Id
2.7V @ 4.5mA (Typ)
Base Product Number
MSC017
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
22mOhm @ 40A, 20V
Power Dissipation (Max)
278W (Tc)
Supplier Device Package
SOT-227
Gate Charge (Qg) (Max) @ Vgs
249 nC @ 20 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
5280 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Current - Continuous Drain (Id) @ 25°C
88A (Tc)
AttributeValue
MfrMicrochip Technology
Grade-
SeriesMSiC™ MA
FET TypeN-Channel
PackagingBulk
Vgs (Max)+23V, -10V
TechnologySiCFET (Silicon Carbide)
Qualification-
Vgs(th) (Max) @ Id2.7V @ 4.5mA (Typ)
Base Product NumberMSC017
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs22mOhm @ 40A, 20V
Power Dissipation (Max)278W (Tc)
Supplier Device PackageSOT-227
Gate Charge (Qg) (Max) @ Vgs249 nC @ 20 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds5280 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C88A (Tc)

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Packaging Process

Product before packing
Step1: Product
Product in vacuum packaging
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-Static Bag
Individual packaging box
Step4: Package Boxes
Packaging box with shipping label
Step5: Bar-Code Shipping Tags
Shipping by cargo vessel
Step6: Shipping