Littelfuse Inc. IXTA02N250HV
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Manufacturer
Manufacturer No
IXTA02N250HV
Quantity
348
Availability
In Stock
Package
TO-263ABVHV
Description
Trans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263ABVHV
Datasheet
Payment
Delivery
HTS
8541.29.00.55
Tab
Tab
PPAP
No
SVHC
Yes
EU RoHS
Compliant with Exemption
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Pin Count
3
Automotive
No
Lead Shape
Gull-wing
PCB changed
2
Availability
In Stock
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Package Width
9.2
Package Height
4.5
Package Length
10
Supplier Package
TO-263ABVHV
Maximum IDSS (uA)
5
Standard Package Name
TO
Manufacturer Lead Time
54 weeks
SVHC Exceeds Threshold
Yes
Typical Fall Time (ns)
33
Typical Rise Time (ns)
19
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
83000
Typical Gate Charge @ 10V (nC)
7.4
Typical Gate Charge @ Vgs (nC)
7.4@10V
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
8
Typical Turn-On Delay Time (ns)
19
Maximum Drain-Source Voltage (V)
2500
Typical Gate Plateau Voltage (V)
6
Typical Turn-Off Delay Time (ns)
32
Maximum Diode Forward Voltage (V)
2
Typical Gate to Drain Charge (nC)
5.3
Maximum Gate Threshold Voltage (V)
4.5
Minimum Gate Threshold Voltage (V)
2.5
Typical Gate to Source Charge (nC)
0.7
Typical Reverse Recovery Time (ns)
1500
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
0.2
Operating Junction Temperature (°C)
150
Typical Input Capacitance @ Vds (pF)
116@25V
Maximum Drain-Source Resistance (mOhm)
450000@10V
Maximum Gate-Source Leakage Current (nA)
100
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
0.6
Typical Reverse Transfer Capacitance @ Vds (pF)
3@25V
| Attribute | Value |
|---|---|
| HTS | 8541.29.00.55 |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 2 |
| Availability | In Stock |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 9.2 |
| Package Height | 4.5 |
| Package Length | 10 |
| Supplier Package | TO-263ABVHV |
| Maximum IDSS (uA) | 5 |
| Standard Package Name | TO |
| Manufacturer Lead Time | 54 weeks |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 33 |
| Typical Rise Time (ns) | 19 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 83000 |
| Typical Gate Charge @ 10V (nC) | 7.4 |
| Typical Gate Charge @ Vgs (nC) | 7.4@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 8 |
| Typical Turn-On Delay Time (ns) | 19 |
| Maximum Drain-Source Voltage (V) | 2500 |
| Typical Gate Plateau Voltage (V) | 6 |
| Typical Turn-Off Delay Time (ns) | 32 |
| Maximum Diode Forward Voltage (V) | 2 |
| Typical Gate to Drain Charge (nC) | 5.3 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Minimum Gate Threshold Voltage (V) | 2.5 |
| Typical Gate to Source Charge (nC) | 0.7 |
| Typical Reverse Recovery Time (ns) | 1500 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.2 |
| Operating Junction Temperature (°C) | 150 |
| Typical Input Capacitance @ Vds (pF) | 116@25V |
| Maximum Drain-Source Resistance (mOhm) | 450000@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 0.6 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 3@25V |
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