IXYS IXTA08N100D2HV

IXYS IXTA08N100D2HV electronic component product image

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Manufacturer
Manufacturer No
IXTA08N100D2HV
Quantity
146
Availability
In Stock
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Tube
Description
MOSFET N-CH 1000V 800MA TO263HV
Detailed Description
N-Channel, Depletion Mode 1000 V 800mA (Tj) 60W (Tc) Surface Mount TO-263HV
Payment
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Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mfr
IXYS
Grade
-
Series
Depletion
FET Type
N-Channel, Depletion Mode
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Surface Mount
Qualification
-
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
4V @ 25µA
Base Product Number
IXTA08
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
21Ohm @ 400mA, 0V
Power Dissipation (Max)
60W (Tc)
Supplier Device Package
TO-263HV
Gate Charge (Qg) (Max) @ Vgs
14.6 nC @ 5 V
Drain to Source Voltage (Vdss)
1000 V
Input Capacitance (Ciss) (Max) @ Vds
325 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
0V
Current - Continuous Drain (Id) @ 25°C
800mA (Tj)
AttributeValue
MfrIXYS
Grade-
SeriesDepletion
FET TypeN-Channel, Depletion Mode
PackagingTube
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
FET Feature-
Mounting TypeSurface Mount
Qualification-
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id4V @ 25µA
Base Product NumberIXTA08
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs21Ohm @ 400mA, 0V
Power Dissipation (Max)60W (Tc)
Supplier Device PackageTO-263HV
Gate Charge (Qg) (Max) @ Vgs14.6 nC @ 5 V
Drain to Source Voltage (Vdss)1000 V
Input Capacitance (Ciss) (Max) @ Vds325 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)0V
Current - Continuous Drain (Id) @ 25°C800mA (Tj)

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Packaging Process

Product before packing
Step1: Product
Product in vacuum packaging
Step2: Vacuum Packaging
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Step3: Anti-Static Bag
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