International Rectifier AUIRLZ24NSTRL

International Rectifier AUIRLZ24NSTRL electronic component product image

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Manufacturer No
AUIRLZ24NSTRL
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Bulk
Description
AUTOMOTIVE HEXFET POWER MOSFET
Detailed Description
N-Channel 55 V 18A (Tc) 3.8W (Ta), 45W (Tc) Surface Mount D2PAK
Datasheet
Payment
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Delivery
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AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mfr
International Rectifier
Grade
Automotive
Series
HEXFET®
FET Type
N-Channel
Packaging
Bulk
Vgs (Max)
±16V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Surface Mount
Qualification
AEC-Q101
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
2V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
60mOhm @ 11A, 10V
Power Dissipation (Max)
3.8W (Ta), 45W (Tc)
Supplier Device Package
D2PAK
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 5 V
Drain to Source Voltage (Vdss)
55 V
Input Capacitance (Ciss) (Max) @ Vds
480 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
AttributeValue
MfrInternational Rectifier
GradeAutomotive
SeriesHEXFET®
FET TypeN-Channel
PackagingBulk
Vgs (Max)±16V
TechnologyMOSFET (Metal Oxide)
FET Feature-
Mounting TypeSurface Mount
QualificationAEC-Q101
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id2V @ 250µA
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs60mOhm @ 11A, 10V
Power Dissipation (Max)3.8W (Ta), 45W (Tc)
Supplier Device PackageD2PAK
Gate Charge (Qg) (Max) @ Vgs15 nC @ 5 V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds480 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C18A (Tc)

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Packaging Process

Product before packing
Step1: Product
Product in vacuum packaging
Step2: Vacuum Packaging
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Step3: Anti-Static Bag
Individual packaging box
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