10-13 NOV 2026 · Munich, Germany

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Infineon Technologies IRF6613TRPBF

Infineon Technologies IRF6613TRPBF electronic component product image

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Manufacturer No
IRF6613TRPBF
Date Code
21+
Quantity
18,000
Availability
In Stock
Package
Direct-FET MT
Packaging
Tape and Reel
Description
Trans MOSFET N-CH Si 40V 23A 7-Pin Direct-FET MT T/R
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.55
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Material
Si
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
7
Automotive
No
Lead Shape
No Lead
PCB changed
7
Availability
In Stock (cut strips)
Channel Mode
Enhancement
Channel Type
N
Configuration
Single Quad Drain Dual Source
Package Width
5.05(Max)
Package Height
0.53(Max)
Package Length
5.45(Max)
Supplier Package
Direct-FET MT
Manufacturer Lead Time
16 weeks
Typical Fall Time (ns)
4.9
Typical Rise Time (ns)
47
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
2800
Typical Gate Charge @ Vgs (nC)
Maximum Gate-Source Voltage (V)
±20
Typical Turn-On Delay Time (ns)
18
Maximum Drain-Source Voltage (V)
40
Typical Turn-Off Delay Time (ns)
27
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-40
Maximum Continuous Drain Current (A)
23
Typical Input Capacitance @ Vds (pF)
5950@15V
Maximum Drain-Source Resistance (mOhm)
3.4@10V
Typical Drain-Source Resistance @ 25°C (mOhm)
AttributeValue
HTS8541.29.00.55
PPAPNo
EU RoHSCompliant
CategoryPower MOSFET
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveNo
Lead ShapeNo Lead
PCB changed7
AvailabilityIn Stock (cut strips)
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Dual Source
Package Width5.05(Max)
Package Height0.53(Max)
Package Length5.45(Max)
Supplier PackageDirect-FET MT
Manufacturer Lead Time16 weeks
Typical Fall Time (ns)4.9
Typical Rise Time (ns)47
Number of Elements per Chip1
Maximum Power Dissipation (mW)2800
Typical Gate Charge @ Vgs (nC)[email protected]
Maximum Gate-Source Voltage (V)±20
Typical Turn-On Delay Time (ns)18
Maximum Drain-Source Voltage (V)40
Typical Turn-Off Delay Time (ns)27
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)23
Typical Input Capacitance @ Vds (pF)5950@15V
Maximum Drain-Source Resistance (mOhm)3.4@10V
Typical Drain-Source Resistance @ 25°C (mOhm)2.6@10V|[email protected]

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