Infineon Technologies IPD30N08S2L-21
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| Attribute | Value |
|---|---|
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | Unknown |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| PCB changed | 2 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 6.22 |
| Package Height | 2.3 |
| Package Length | 6.5 |
| Supplier Package | DPAK |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 30 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 136000 |
| Typical Gate Charge @ 10V (nC) | 56 |
| Typical Gate Charge @ Vgs (nC) | 56@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 9 |
| Maximum Drain-Source Voltage (V) | 75 |
| Typical Turn-Off Delay Time (ns) | 44 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 30 |
| Typical Input Capacitance @ Vds (pF) | 1650@25V |
| Maximum Drain-Source Resistance (mOhm) | 20.5@10V |
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Packaging Process
