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Infineon Technologies IPD30N06S2L23

Infineon Technologies IPD30N06S2L23 electronic component product image

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Manufacturer No
IPD30N06S2L23
Package
DPAK
Packaging
Tape and Reel
Description
Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.55
Tab
Tab
PPAP
Unknown
SVHC
Yes
EU RoHS
Compliant with Exemption
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
3
Automotive
Yes
PCB changed
2
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Package Width
6.22
Package Height
2.3
Package Length
6.5
Supplier Package
DPAK
Maximum IDSS (uA)
1
Standard Package Name
TO
SVHC Exceeds Threshold
Yes
Typical Fall Time (ns)
9
Typical Rise Time (ns)
22
Supplier Temperature Grade
Automotive
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
100000
Typical Gate Charge @ 10V (nC)
33
Typical Gate Charge @ Vgs (nC)
33@10V
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
310
Typical Turn-On Delay Time (ns)
7
Maximum Drain-Source Voltage (V)
55
Typical Gate Plateau Voltage (V)
3.4
Typical Turn-Off Delay Time (ns)
33
Maximum Diode Forward Voltage (V)
1.3
Typical Diode Forward Voltage (V)
0.9
Typical Gate to Drain Charge (nC)
11
Maximum Gate Threshold Voltage (V)
2
Minimum Gate Threshold Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
1.6
Typical Gate to Source Charge (nC)
4
Typical Reverse Recovery Time (ns)
47
Maximum Operating Temperature (°C)
175
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
30
Operating Junction Temperature (°C)
-55 to 175
Typical Input Capacitance @ Vds (pF)
1091@25V
Typical Reverse Recovery Charge (nC)
45
Maximum Drain-Source Resistance (mOhm)
23@10V
Maximum Gate-Source Leakage Current (nA)
100
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
120
Typical Drain-Source Resistance @ 25°C (mOhm)
Typical Reverse Transfer Capacitance @ Vds (pF)
107@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
75
AttributeValue
HTS8541.29.00.55
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
CategoryPower MOSFET
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
PCB changed2
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22
Package Height2.3
Package Length6.5
Supplier PackageDPAK
Maximum IDSS (uA)1
Standard Package NameTO
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)9
Typical Rise Time (ns)22
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)100000
Typical Gate Charge @ 10V (nC)33
Typical Gate Charge @ Vgs (nC)33@10V
Maximum Gate-Source Voltage (V)±20
Typical Output Capacitance (pF)310
Typical Turn-On Delay Time (ns)7
Maximum Drain-Source Voltage (V)55
Typical Gate Plateau Voltage (V)3.4
Typical Turn-Off Delay Time (ns)33
Maximum Diode Forward Voltage (V)1.3
Typical Diode Forward Voltage (V)0.9
Typical Gate to Drain Charge (nC)11
Maximum Gate Threshold Voltage (V)2
Minimum Gate Threshold Voltage (V)1.2
Typical Gate Threshold Voltage (V)1.6
Typical Gate to Source Charge (nC)4
Typical Reverse Recovery Time (ns)47
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)30
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1091@25V
Typical Reverse Recovery Charge (nC)45
Maximum Drain-Source Resistance (mOhm)23@10V
Maximum Gate-Source Leakage Current (nA)100
Maximum Positive Gate-Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)120
Typical Drain-Source Resistance @ 25°C (mOhm)15.9@10V|[email protected]
Typical Reverse Transfer Capacitance @ Vds (pF)107@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)75

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