10-13 NOV 2026 · Munich, Germany

MEET FIXCHIPS (C3-161) AT electronica 2026

EPC EPC2302ENGRT

EPC EPC2302ENGRT electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
EPC2302ENGRT
Package
7-PowerWQFN
Packaging
Tape & Reel (TR)
Description
TRANS GAN 100V DIE .0018OHM
Detailed Description
N-Channel 100 V 101A (Ta) Surface Mount 7-QFN (3x5)
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mfr
EPC
Grade
-
Series
eGaN®
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
+6V, -4V
Technology
GaNFET (Gallium Nitride)
FET Feature
-
Mounting Type
Surface Mount
Qualification
-
Package / Case
7-PowerWQFN
Vgs(th) (Max) @ Id
2.5V @ 14mA
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
1.8mOhm @ 50A, 5V
Power Dissipation (Max)
-
Supplier Device Package
7-QFN (3x5)
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 5 V
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
3200 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)
5V
Current - Continuous Drain (Id) @ 25°C
101A (Ta)
AttributeValue
MfrEPC
Grade-
SerieseGaN®
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)+6V, -4V
TechnologyGaNFET (Gallium Nitride)
FET Feature-
Mounting TypeSurface Mount
Qualification-
Package / Case7-PowerWQFN
Vgs(th) (Max) @ Id2.5V @ 14mA
Operating Temperature-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs1.8mOhm @ 50A, 5V
Power Dissipation (Max)-
Supplier Device Package7-QFN (3x5)
Gate Charge (Qg) (Max) @ Vgs23 nC @ 5 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds3200 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C101A (Ta)

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Packaging Process