
EPC EPC2252
Mfr
EPC
Grade
Automotive
Series
eGaN®
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT)
Vgs (Max)
+6V, -4V
Technology
GaNFET (Gallium Nitride)
FET Feature
-
Mounting Type
Surface Mount
Qualification
AEC-Q101
Package / Case
Die
Vgs(th) (Max) @ Id
2.5V @ 2.5mA
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
11mOhm @ 11A, 5V
Power Dissipation (Max)
-
Supplier Device Package
Die
Gate Charge (Qg) (Max) @ Vgs
4.3 nC @ 5 V
Drain to Source Voltage (Vdss)
80 V
Input Capacitance (Ciss) (Max) @ Vds
576 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C
8.2A (Ta)
| Attribute | Value |
|---|---|
| Mfr | EPC |
| Grade | Automotive |
| Series | eGaN® |
| FET Type | N-Channel |
| Packaging | Tape & Reel (TR); Cut Tape (CT) |
| Vgs (Max) | +6V, -4V |
| Technology | GaNFET (Gallium Nitride) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q101 |
| Package / Case | Die |
| Vgs(th) (Max) @ Id | 2.5V @ 2.5mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 11A, 5V |
| Power Dissipation (Max) | - |
| Supplier Device Package | Die |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 80 V |
| Input Capacitance (Ciss) (Max) @ Vds | 576 pF @ 50 V |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) |
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Packaging Process

Step1: Product

Step2: Vacuum Packaging

Step3: Anti-Static Bag

Step4: Package Boxes

Step5: Bar-Code Shipping Tags

Step6: Shipping
























