Vishay SIA445EDJ-T1-GE3
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Manufacturer
Manufacturer No
SIA445EDJ-T1-GE3
Date Code
19+
Quantity
100
Availability
In Stock
Package
PowerPAK SC-70 EP
Packaging
Tape and Reel
Description
Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 EP T/R
Detailed Description
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SIA445EDJ-T1-GE3 power MOSFET can provide a solution. Its maximum power dissipation is 3500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.
Datasheet
Payment
Delivery
HTS
COMPONENTS
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
6
Automotive
No
Lead Shape
No Lead
PCB changed
6
Availability
In Stock (cut strips)
Channel Mode
Enhancement
Channel Type
P
Configuration
Single Quad Drain
Package Width
2.05
Package Height
0.71
Package Length
2.05
Supplier Package
PowerPAK SC-70 EP
Maximum IDSS (uA)
1
Process Technology
0.18um
Manufacturer Lead Time
52 weeks
Typical Fall Time (ns)
20|17
Typical Rise Time (ns)
25|10
Number of Elements per Chip
1
Maximum Gate Resistance (Ohm)
12
Minimum Gate Resistance (Ohm)
1.2
Maximum Power Dissipation (mW)
3500
Typical Gate Charge @ 10V (nC)
48
Typical Gate Charge @ Vgs (nC)
[email protected]|48@10V
Maximum Gate-Source Voltage (V)
±12
Typical Output Capacitance (pF)
290
Typical Turn-On Delay Time (ns)
25|7
Maximum Drain-Source Voltage (V)
20
Typical Gate Plateau Voltage (V)
1.8
Typical Turn-Off Delay Time (ns)
55|60
Maximum Diode Forward Voltage (V)
1.2
Typical Diode Forward Voltage (V)
0.8
Typical Gate to Drain Charge (nC)
6.7
Maximum Gate Threshold Voltage (V)
1.2
Minimum Gate Threshold Voltage (V)
0.5
Typical Gate to Source Charge (nC)
3.1
Typical Reverse Recovery Time (ns)
15
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
12
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
2130@10V
Typical Reverse Recovery Charge (nC)
5
Maximum Drain-Source Resistance (mOhm)
Maximum Gate-Source Leakage Current (nA)
60000
Maximum Positive Gate-Source Voltage (V)
12
Maximum Pulsed Drain Current @ TC=25°C (A)
50
Typical Drain-Source Resistance @ 25°C (mOhm)
Maximum Power Dissipation on PCB @ TC=25°C (W)
3.5
Typical Reverse Transfer Capacitance @ Vds (pF)
280@10V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
11.8
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
80
| Attribute | Value |
|---|---|
| HTS | COMPONENTS |
| PPAP | No |
| EU RoHS | Compliant |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 6 |
| Availability | In Stock (cut strips) |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain |
| Package Width | 2.05 |
| Package Height | 0.71 |
| Package Length | 2.05 |
| Supplier Package | PowerPAK SC-70 EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | 0.18um |
| Manufacturer Lead Time | 52 weeks |
| Typical Fall Time (ns) | 20|17 |
| Typical Rise Time (ns) | 25|10 |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 12 |
| Minimum Gate Resistance (Ohm) | 1.2 |
| Maximum Power Dissipation (mW) | 3500 |
| Typical Gate Charge @ 10V (nC) | 48 |
| Typical Gate Charge @ Vgs (nC) | [email protected]|48@10V |
| Maximum Gate-Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 290 |
| Typical Turn-On Delay Time (ns) | 25|7 |
| Maximum Drain-Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.8 |
| Typical Turn-Off Delay Time (ns) | 55|60 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 6.7 |
| Maximum Gate Threshold Voltage (V) | 1.2 |
| Minimum Gate Threshold Voltage (V) | 0.5 |
| Typical Gate to Source Charge (nC) | 3.1 |
| Typical Reverse Recovery Time (ns) | 15 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 2130@10V |
| Typical Reverse Recovery Charge (nC) | 5 |
| Maximum Drain-Source Resistance (mOhm) | [email protected] |
| Maximum Gate-Source Leakage Current (nA) | 60000 |
| Maximum Positive Gate-Source Voltage (V) | 12 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 50 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | [email protected]|[email protected]|[email protected] |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 280@10V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 11.8 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 80 |
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