Vishay SI9407BDY-T1-GE3
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Manufacturer
Manufacturer No
SI9407BDY-T1-GE3
Date Code
26+
Quantity
5,076
Availability
In Stock
Package
SOIC N
Packaging
Tape and Reel
Description
Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R
Detailed Description
Amplify electronic signals and switch between them with the help of Vishay's SI9407BDY-T1-GE3 power MOSFET. Its maximum power dissipation is 2400 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Datasheet
Payment
Delivery
HTS
8541.29.00.55
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
8
Automotive
No
Lead Shape
Gull-wing
PCB changed
8
Availability
In Stock
Channel Mode
Enhancement
Channel Type
P
Configuration
Single Quad Drain Triple Source
Package Width
4(Max)
Package Height
1.55(Max)
Package Length
5(Max)
Supplier Package
SOIC N
Maximum IDSS (uA)
1
Standard Package Name
SO
Manufacturer Lead Time
14 weeks
Typical Fall Time (ns)
30
Typical Rise Time (ns)
70
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
2400
Typical Gate Charge @ 10V (nC)
14.5
Typical Gate Charge @ Vgs (nC)
14.5@10V|[email protected]
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
70
Typical Turn-On Delay Time (ns)
30
Maximum Drain-Source Voltage (V)
60
Typical Turn-Off Delay Time (ns)
40
Maximum Diode Forward Voltage (V)
1.2
Typical Diode Forward Voltage (V)
0.8
Typical Gate to Drain Charge (nC)
3.7
Maximum Gate Threshold Voltage (V)
3
Minimum Gate Threshold Voltage (V)
1
Typical Gate to Source Charge (nC)
2.2
Typical Reverse Recovery Time (ns)
30
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
4.7
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
600@30V
Typical Reverse Recovery Charge (nC)
35
Maximum Drain-Source Resistance (mOhm)
120@10V
Maximum Gate-Source Leakage Current (nA)
100
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
20
Typical Drain-Source Resistance @ 25°C (mOhm)
[email protected]|100@10V
Typical Reverse Transfer Capacitance @ Vds (pF)
50@30V
| Attribute | Value |
|---|---|
| HTS | 8541.29.00.55 |
| PPAP | No |
| EU RoHS | Compliant |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Availability | In Stock |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 4(Max) |
| Package Height | 1.55(Max) |
| Package Length | 5(Max) |
| Supplier Package | SOIC N |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SO |
| Manufacturer Lead Time | 14 weeks |
| Typical Fall Time (ns) | 30 |
| Typical Rise Time (ns) | 70 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2400 |
| Typical Gate Charge @ 10V (nC) | 14.5 |
| Typical Gate Charge @ Vgs (nC) | 14.5@10V|[email protected] |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 70 |
| Typical Turn-On Delay Time (ns) | 30 |
| Maximum Drain-Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 40 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 3.7 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 2.2 |
| Typical Reverse Recovery Time (ns) | 30 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.7 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 600@30V |
| Typical Reverse Recovery Charge (nC) | 35 |
| Maximum Drain-Source Resistance (mOhm) | 120@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | [email protected]|100@10V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 50@30V |
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