Vishay IRFU110PBF
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Manufacturer
Manufacturer No
IRFU110PBF
Availability
In Stock
Package
IPAK
Packaging
Tube
Description
Trans MOSFET N-CH 100V 4.3A 3-Pin(3+Tab) IPAK
Detailed Description
Compared to traditional transistors, IRFU110PBF power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 25000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Datasheet
Payment
Delivery
HTS
8541.10.00.80
Tab
Tab
PPAP
No
SVHC
Yes
EU RoHS
Compliant with Exemption
Category
Power MOSFET
Mounting
Through Hole
ECCN (US)
EAR99
Pin Count
3
Automotive
No
PCB changed
3
Availability
In Stock
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Package Width
2.39(Max)
Package Height
6.22(Max)
Package Length
6.73(Max)
Supplier Package
IPAK
Maximum IDSS (uA)
25
Standard Package Name
TO
Manufacturer Lead Time
20 weeks
SVHC Exceeds Threshold
Yes
Typical Fall Time (ns)
9.4
Typical Rise Time (ns)
16
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
25000
Typical Gate Charge @ 10V (nC)
8.3(Max)
Typical Gate Charge @ Vgs (nC)
8.3(Max)@10V
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
81
Typical Turn-On Delay Time (ns)
6.9
Maximum Drain-Source Voltage (V)
100
Typical Turn-Off Delay Time (ns)
15
Maximum Diode Forward Voltage (V)
2.5
Typical Gate to Drain Charge (nC)
3.8(Max)
Maximum Gate Threshold Voltage (V)
4
Minimum Gate Threshold Voltage (V)
2
Typical Gate to Source Charge (nC)
2.3(Max)
Typical Reverse Recovery Time (ns)
100
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
4.3
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
180@25V
Typical Reverse Recovery Charge (nC)
440
Maximum Drain-Source Resistance (mOhm)
540@10V
Maximum Gate-Source Leakage Current (nA)
100
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
17
Typical Reverse Transfer Capacitance @ Vds (pF)
15@25V
| Attribute | Value |
|---|---|
| HTS | 8541.10.00.80 |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Category | Power MOSFET |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Availability | In Stock |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 2.39(Max) |
| Package Height | 6.22(Max) |
| Package Length | 6.73(Max) |
| Supplier Package | IPAK |
| Maximum IDSS (uA) | 25 |
| Standard Package Name | TO |
| Manufacturer Lead Time | 20 weeks |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 9.4 |
| Typical Rise Time (ns) | 16 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 25000 |
| Typical Gate Charge @ 10V (nC) | 8.3(Max) |
| Typical Gate Charge @ Vgs (nC) | 8.3(Max)@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 81 |
| Typical Turn-On Delay Time (ns) | 6.9 |
| Maximum Drain-Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Maximum Diode Forward Voltage (V) | 2.5 |
| Typical Gate to Drain Charge (nC) | 3.8(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 2.3(Max) |
| Typical Reverse Recovery Time (ns) | 100 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.3 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 180@25V |
| Typical Reverse Recovery Charge (nC) | 440 |
| Maximum Drain-Source Resistance (mOhm) | 540@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 17 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 15@25V |
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