Vishay IRFL9014TRPBF
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Manufacturer
Manufacturer No
IRFL9014TRPBF
Date Code
24+
Quantity
15,000
Availability
In Stock
Package
SOT-223
Packaging
Tape and Reel
Description
Trans MOSFET P-CH 60V 1.8A 4-Pin(3+Tab) SOT-223 T/R
Detailed Description
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the IRFL9014TRPBF power MOSFET. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Datasheet
Payment
Delivery
HTS
COMPONENTS
Tab
Tab
PPAP
No
SVHC
Yes
EU RoHS
Compliant with Exemption
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
4
Automotive
No
Lead Shape
Gull-wing
PCB changed
3
Availability
In Stock
Channel Mode
Enhancement
Channel Type
P
Configuration
Single Dual Drain
Package Width
3.5
Package Height
1.61
Package Length
6.5
Supplier Package
SOT-223
Maximum IDSS (uA)
100
Standard Package Name
SOT
Manufacturer Lead Time
20 weeks
SVHC Exceeds Threshold
Yes
Typical Fall Time (ns)
31
Typical Rise Time (ns)
63
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
2000
Typical Gate Charge @ 10V (nC)
12(Max)
Typical Gate Charge @ Vgs (nC)
12(Max)@10V
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
170
Typical Turn-On Delay Time (ns)
11
Maximum Drain-Source Voltage (V)
60
Typical Gate Plateau Voltage (V)
7.9
Typical Turn-Off Delay Time (ns)
9.6
Maximum Diode Forward Voltage (V)
5.5
Typical Gate to Drain Charge (nC)
5.1(Max)
Maximum Gate Threshold Voltage (V)
4
Minimum Gate Threshold Voltage (V)
2
Typical Gate to Source Charge (nC)
3.8(Max)
Typical Reverse Recovery Time (ns)
80
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
1.8
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
270@25V
Typical Reverse Recovery Charge (nC)
96
Maximum Drain-Source Resistance (mOhm)
500@10V
Maximum Gate-Source Leakage Current (nA)
100
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
14
Maximum Power Dissipation on PCB @ TC=25°C (W)
2
Typical Reverse Transfer Capacitance @ Vds (pF)
31@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
60
| Attribute | Value |
|---|---|
| HTS | COMPONENTS |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Availability | In Stock |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Dual Drain |
| Package Width | 3.5 |
| Package Height | 1.61 |
| Package Length | 6.5 |
| Supplier Package | SOT-223 |
| Maximum IDSS (uA) | 100 |
| Standard Package Name | SOT |
| Manufacturer Lead Time | 20 weeks |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 31 |
| Typical Rise Time (ns) | 63 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ 10V (nC) | 12(Max) |
| Typical Gate Charge @ Vgs (nC) | 12(Max)@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 170 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Drain-Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 7.9 |
| Typical Turn-Off Delay Time (ns) | 9.6 |
| Maximum Diode Forward Voltage (V) | 5.5 |
| Typical Gate to Drain Charge (nC) | 5.1(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 3.8(Max) |
| Typical Reverse Recovery Time (ns) | 80 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.8 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 270@25V |
| Typical Reverse Recovery Charge (nC) | 96 |
| Maximum Drain-Source Resistance (mOhm) | 500@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 14 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 31@25V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 60 |
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