Vishay IRFD9024PBF
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Manufacturer
Manufacturer No
IRFD9024PBF
Date Code
25+
Quantity
150
Availability
In Stock
Package
HVMDIP
Packaging
Tube
Description
Trans MOSFET P-CH 60V 1.6A 4-Pin HVMDIP
Detailed Description
Create an effective common drain amplifier using this IRFD9024PBF power MOSFET from Vishay. Its maximum power dissipation is 1300 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This P channel MOSFET transistor operates in enhancement mode.
Datasheet
Payment
Delivery
HTS
8541.29.00.95
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Through Hole
ECCN (US)
EAR99
Pin Count
4
Automotive
No
Lead Shape
Through Hole
PCB changed
4
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
P
Configuration
Single Dual Drain
Package Width
6.2
Package Height
3.28
Package Length
4.9
Supplier Package
HVMDIP
Maximum IDSS (uA)
100
Standard Package Name
DIP
Typical Fall Time (ns)
29
Typical Rise Time (ns)
68
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
1300
Typical Gate Charge @ 10V (nC)
19(Max)
Typical Gate Charge @ Vgs (nC)
19(Max)@10V
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
360
Typical Turn-On Delay Time (ns)
13
Maximum Drain-Source Voltage (V)
60
Typical Gate Plateau Voltage (V)
7.25
Typical Turn-Off Delay Time (ns)
15
Maximum Diode Forward Voltage (V)
6.3
Typical Gate to Drain Charge (nC)
11(Max)
Maximum Gate Threshold Voltage (V)
4
Minimum Gate Threshold Voltage (V)
2
Typical Gate to Source Charge (nC)
5.4(Max)
Typical Reverse Recovery Time (ns)
100
Maximum Operating Temperature (°C)
175
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
1.6
Operating Junction Temperature (°C)
-55 to 175
Typical Input Capacitance @ Vds (pF)
570@25V
Typical Reverse Recovery Charge (nC)
320
Maximum Drain-Source Resistance (mOhm)
280@10V
Maximum Gate-Source Leakage Current (nA)
100
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
13
Typical Reverse Transfer Capacitance @ Vds (pF)
65@25V
| Attribute | Value |
|---|---|
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Category | Power MOSFET |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 4 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Dual Drain |
| Package Width | 6.2 |
| Package Height | 3.28 |
| Package Length | 4.9 |
| Supplier Package | HVMDIP |
| Maximum IDSS (uA) | 100 |
| Standard Package Name | DIP |
| Typical Fall Time (ns) | 29 |
| Typical Rise Time (ns) | 68 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1300 |
| Typical Gate Charge @ 10V (nC) | 19(Max) |
| Typical Gate Charge @ Vgs (nC) | 19(Max)@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 360 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Drain-Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 7.25 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Maximum Diode Forward Voltage (V) | 6.3 |
| Typical Gate to Drain Charge (nC) | 11(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 5.4(Max) |
| Typical Reverse Recovery Time (ns) | 100 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.6 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 570@25V |
| Typical Reverse Recovery Charge (nC) | 320 |
| Maximum Drain-Source Resistance (mOhm) | 280@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 13 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 65@25V |
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