Vishay IRF9530STRLPBF
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Manufacturer
Manufacturer No
IRF9530STRLPBF
Date Code
23+
Quantity
3,200
Availability
In Stock
Package
D2PAK
Packaging
Tape and Reel
Description
Trans MOSFET P-CH 100V 12A 3-Pin(2+Tab) D2PAK T/R
Detailed Description
If you need to either amplify or switch between signals in your design, then Vishay's IRF9530STRLPBF power MOSFET is for you. Its maximum power dissipation is 3700 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
Datasheet
Payment
Delivery
HTS
8541.10.00.80
Tab
Tab
PPAP
No
SVHC
Yes
EU RoHS
Compliant with Exemption
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
3
Automotive
No
PCB changed
2
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
P
Configuration
Single
Package Width
9.65(Max)
Package Height
4.83(Max)
Package Length
10.41(Max)
Supplier Package
D2PAK
Maximum IDSS (uA)
100
Standard Package Name
TO
Manufacturer Lead Time
20 weeks
SVHC Exceeds Threshold
Yes
Typical Fall Time (ns)
39
Typical Rise Time (ns)
52
Number of Elements per Chip
1
Maximum Gate Resistance (Ohm)
3.3
Minimum Gate Resistance (Ohm)
0.4
Maximum Power Dissipation (mW)
3700
Typical Gate Charge @ 10V (nC)
38(Max)
Typical Gate Charge @ Vgs (nC)
38(Max)@10V
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
340
Typical Turn-On Delay Time (ns)
12
Maximum Drain-Source Voltage (V)
100
Typical Gate Plateau Voltage (V)
6.8
Typical Turn-Off Delay Time (ns)
31
Maximum Diode Forward Voltage (V)
6.3
Typical Gate to Drain Charge (nC)
21(Max)
Maximum Gate Threshold Voltage (V)
4
Minimum Gate Threshold Voltage (V)
2
Typical Gate to Source Charge (nC)
6.8(Max)
Typical Reverse Recovery Time (ns)
120
Maximum Operating Temperature (°C)
175
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
12
Operating Junction Temperature (°C)
-55 to 175
Typical Input Capacitance @ Vds (pF)
860@25V
Typical Reverse Recovery Charge (nC)
460
Maximum Drain-Source Resistance (mOhm)
300@10V
Maximum Gate-Source Leakage Current (nA)
100
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
48
Maximum Power Dissipation on PCB @ TC=25°C (W)
3.7
Typical Reverse Transfer Capacitance @ Vds (pF)
93@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
40
| Attribute | Value |
|---|---|
| HTS | 8541.10.00.80 |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 2 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 9.65(Max) |
| Package Height | 4.83(Max) |
| Package Length | 10.41(Max) |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 100 |
| Standard Package Name | TO |
| Manufacturer Lead Time | 20 weeks |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 39 |
| Typical Rise Time (ns) | 52 |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 3.3 |
| Minimum Gate Resistance (Ohm) | 0.4 |
| Maximum Power Dissipation (mW) | 3700 |
| Typical Gate Charge @ 10V (nC) | 38(Max) |
| Typical Gate Charge @ Vgs (nC) | 38(Max)@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 340 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain-Source Voltage (V) | 100 |
| Typical Gate Plateau Voltage (V) | 6.8 |
| Typical Turn-Off Delay Time (ns) | 31 |
| Maximum Diode Forward Voltage (V) | 6.3 |
| Typical Gate to Drain Charge (nC) | 21(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 6.8(Max) |
| Typical Reverse Recovery Time (ns) | 120 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 860@25V |
| Typical Reverse Recovery Charge (nC) | 460 |
| Maximum Drain-Source Resistance (mOhm) | 300@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 48 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.7 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 93@25V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 40 |
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