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Vishay IRF634PBF

Vishay IRF634PBF electronic component product image

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Manufacturer
Manufacturer No
IRF634PBF
Date Code
22+
Quantity
50
Availability
In Stock
Package
TO-220AB
Packaging
Tube
Description
Trans MOSFET N-CH 250V 8.1A 3-Pin(3+Tab) TO-220AB
Detailed Description
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IRF634PBF power MOSFET, developed by Vishay. Its maximum power dissipation is 74000 mW. This device is made with HEXFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.95
Tab
Tab
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Through Hole
ECCN (US)
EAR99
Pin Count
3
Automotive
No
Lead Shape
Through Hole
PCB changed
3
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Package Width
4.7(Max)
Package Height
9.01(Max)
Package Length
10.41(Max)
Supplier Package
TO-220AB
Process Technology
0.3um
Standard Package Name
TO
Manufacturer Lead Time
20 weeks
Typical Fall Time (ns)
19
Typical Rise Time (ns)
21
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
74000
Typical Gate Charge @ 10V (nC)
41(Max)
Typical Gate Charge @ Vgs (nC)
41(Max)@10V
Maximum Gate-Source Voltage (V)
±20
Typical Turn-On Delay Time (ns)
9.6
Maximum Drain-Source Voltage (V)
250
Typical Turn-Off Delay Time (ns)
42
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
8.1
Typical Input Capacitance @ Vds (pF)
770@25V
Maximum Drain-Source Resistance (mOhm)
450@10V
AttributeValue
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
CategoryPower MOSFET
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.01(Max)
Package Length10.41(Max)
Supplier PackageTO-220AB
Process Technology0.3um
Standard Package NameTO
Manufacturer Lead Time20 weeks
Typical Fall Time (ns)19
Typical Rise Time (ns)21
Number of Elements per Chip1
Maximum Power Dissipation (mW)74000
Typical Gate Charge @ 10V (nC)41(Max)
Typical Gate Charge @ Vgs (nC)41(Max)@10V
Maximum Gate-Source Voltage (V)±20
Typical Turn-On Delay Time (ns)9.6
Maximum Drain-Source Voltage (V)250
Typical Turn-Off Delay Time (ns)42
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8.1
Typical Input Capacitance @ Vds (pF)770@25V
Maximum Drain-Source Resistance (mOhm)450@10V

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