10-13 NOV 2026 · Munich, Germany

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Vishay BPW96B

Vishay BPW96B electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
BPW96B
Quantity
36
Availability
In Stock
Package
T-1 3/4
Packaging
Bulk
Description
No Phototransistor Chip Silicon 850nm 2-Pin T-1 3/4 Bulk
Detailed Description
Phototransistors 850nm Top View Radial, 5mm Dia (T 1 3/4)
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.49.70.80
PPAP
No
Type
Chip
EU RoHS
Compliant
Diameter
5.75
Material
Silicon
Mounting
Through Hole
Polarity
NPN
ECCN (US)
EAR99
Packaging
Bulk
Pin Count
2
Automotive
No
Lead Shape
Through Hole
Lens Color
Clear
PCB changed
2
Availability
In Stock
Package Height
8.6
Lens Shape Type
Domed
Supplier Package
T-1 3/4
Viewing Orientation
Top View
Peak Wavelength (nm)
850
Phototransistor Type
Phototransistor
Fabrication Technology
NPN Transistor
Manufacturer Lead Time
6 weeks
Maximum Dark Current (nA)
200
Maximum Light Current (uA)
7500
Number of Channels per Chip
1
Maximum Collector Current (mA)
50
Maximum Power Dissipation (mW)
150
Half Intensity Angle Degrees (°)
40
Maximum Operating Temperature (°C)
100
Minimum Operating Temperature (°C)
-40
Maximum Collector-Emitter Voltage (V)
70
Maximum Emitter-Collector Voltage (V)
5
Maximum Collector-Emitter Saturation Voltage (V)
0.3
AttributeValue
HTS8541.49.70.80
PPAPNo
TypeChip
EU RoHSCompliant
Diameter5.75
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
PackagingBulk
Pin Count2
AutomotiveNo
Lead ShapeThrough Hole
Lens ColorClear
PCB changed2
AvailabilityIn Stock
Package Height8.6
Lens Shape TypeDomed
Supplier PackageT-1 3/4
Viewing OrientationTop View
Peak Wavelength (nm)850
Phototransistor TypePhototransistor
Fabrication TechnologyNPN Transistor
Manufacturer Lead Time6 weeks
Maximum Dark Current (nA)200
Maximum Light Current (uA)7500
Number of Channels per Chip1
Maximum Collector Current (mA)50
Maximum Power Dissipation (mW)150
Half Intensity Angle Degrees (°)40
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)70
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.3

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