10-13 NOV 2026 · Munich, Germany

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Vishay BPW76B

Vishay BPW76B electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
BPW76B
Quantity
5
Availability
In Stock
Package
TO-206AA
Packaging
Bulk
Description
Phototransistor Chip Silicon 850nm 3-Pin TO-206AA
Detailed Description
Phototransistors 850nm Top View TO-206AA, TO-18-3 Metal Can
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.49.70.40
PPAP
No
Type
Chip
EU RoHS
Compliant
Diameter
5.5
Material
Silicon
Mounting
Through Hole
Polarity
NPN
ECCN (US)
EAR99
Pin Count
3
Automotive
No
Lead Shape
Through Hole
PCB changed
3
Availability
In Stock
Package Height
6.15
Lens Shape Type
Flat
Supplier Package
TO-206AA
Viewing Orientation
Top View
Peak Wavelength (nm)
850
Phototransistor Type
Phototransistor
Standard Package Name
TO
Fabrication Technology
NPN Transistor
Manufacturer Lead Time
6 weeks
Maximum Dark Current (nA)
100
Maximum Light Current (uA)
1200(Typ)
Number of Channels per Chip
1
Maximum Collector Current (mA)
50
Maximum Power Dissipation (mW)
250
Half Intensity Angle Degrees (°)
80
Maximum Operating Temperature (°C)
125
Minimum Operating Temperature (°C)
-40
Maximum Collector-Emitter Voltage (V)
70
Maximum Collector-Emitter Saturation Voltage (V)
0.3
AttributeValue
HTS8541.49.70.40
PPAPNo
TypeChip
EU RoHSCompliant
Diameter5.5
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
AvailabilityIn Stock
Package Height6.15
Lens Shape TypeFlat
Supplier PackageTO-206AA
Viewing OrientationTop View
Peak Wavelength (nm)850
Phototransistor TypePhototransistor
Standard Package NameTO
Fabrication TechnologyNPN Transistor
Manufacturer Lead Time6 weeks
Maximum Dark Current (nA)100
Maximum Light Current (uA)1200(Typ)
Number of Channels per Chip1
Maximum Collector Current (mA)50
Maximum Power Dissipation (mW)250
Half Intensity Angle Degrees (°)80
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)70
Maximum Collector-Emitter Saturation Voltage (V)0.3

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Packaging Process