Vishay SI2309CDS-T1-GE3
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Manufacturer
Manufacturer No
SI2309CDS-T1-GE3
Date Code
2145
Quantity
1
Availability
In Stock
Package
SOT-23
Packaging
Tape and Reel
Description
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R
Detailed Description
Increase the current or voltage in your circuit with this SI2309CDS-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 1000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.
Datasheet
Payment
Delivery
HTS
COMPONENTS
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
3
Automotive
No
Lead Shape
Gull-wing
PCB changed
3
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
P
Configuration
Single
Package Width
1.3
Package Height
0.95
Package Length
2.92
Supplier Package
SOT-23
Maximum IDSS (uA)
1
Process Technology
TrenchFET
Standard Package Name
SOT
Manufacturer Lead Time
42 weeks
Typical Fall Time (ns)
10
Typical Rise Time (ns)
35
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
1000
Typical Gate Charge @ Vgs (nC)
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
28
Typical Turn-On Delay Time (ns)
40
Maximum Drain-Source Voltage (V)
60
Typical Gate Plateau Voltage (V)
3
Typical Turn-Off Delay Time (ns)
15
Maximum Diode Forward Voltage (V)
1.2
Typical Diode Forward Voltage (V)
0.8
Typical Gate to Drain Charge (nC)
1.2
Maximum Gate Threshold Voltage (V)
3
Minimum Gate Threshold Voltage (V)
1
Typical Gate to Source Charge (nC)
0.8
Typical Reverse Recovery Time (ns)
30
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
1.6
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
210@30V
Typical Reverse Recovery Charge (nC)
33
Maximum Drain-Source Resistance (mOhm)
345@10V
Maximum Gate-Source Leakage Current (nA)
100
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
8
Typical Drain-Source Resistance @ 25°C (mOhm)
[email protected]|285@10V
Maximum Power Dissipation on PCB @ TC=25°C (W)
1
Typical Reverse Transfer Capacitance @ Vds (pF)
20@30V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
1.2
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
166
| Attribute | Value |
|---|---|
| HTS | COMPONENTS |
| PPAP | No |
| EU RoHS | Compliant |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 1.3 |
| Package Height | 0.95 |
| Package Length | 2.92 |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | SOT |
| Manufacturer Lead Time | 42 weeks |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 35 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1000 |
| Typical Gate Charge @ Vgs (nC) | [email protected] |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 28 |
| Typical Turn-On Delay Time (ns) | 40 |
| Maximum Drain-Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 3 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 1.2 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 0.8 |
| Typical Reverse Recovery Time (ns) | 30 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.6 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 210@30V |
| Typical Reverse Recovery Charge (nC) | 33 |
| Maximum Drain-Source Resistance (mOhm) | 345@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 8 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | [email protected]|285@10V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 20@30V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 1.2 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 166 |
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