10-13 NOV 2026 · Munich, Germany

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TT Electronics / Semelab D2017UK

TT Electronics / Semelab D2017UK electronic component product image

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Manufacturer No
D2017UK
Package
Case DP
Description
Trans RF MOSFET 65V 2A 3-Pin Case DP
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.55
PPAP
No
EU RoHS
Compliant
Material
Si
Mounting
Surface Mount
ECCN (US)
EAR99
Pin Count
3
Automotive
No
PCB changed
3
Availability
No Stock Available
Maximum VSWR
20
Configuration
Single
Package Width
6.35
Package Height
3.56
Package Length
6.35
Supplier Package
Case DP
Maximum IDSS (uA)
2000
Maximum Frequency (MHz)
1000
Typical Power Gain (dB)
13(Min)
Number of Elements per Chip
1
Typical Drain Efficiency (%)
40(Min)
Maximum Power Dissipation (mW)
29000
Maximum Gate-Source Voltage (V)
±20
Maximum Drain-Source Voltage (V)
65
Maximum Gate Threshold Voltage (V)
7
Maximum Operating Temperature (°C)
200
Minimum Operating Temperature (°C)
-65
Maximum Continuous Drain Current (A)
2
Typical Forward Transconductance (S)
0.36(Min)
Typical Input Capacitance @ Vds (pF)
20(Max)@0V
Typical Output Capacitance @ Vds (pF)
11(Max)@28V
Maximum Gate-Source Leakage Current (nA)
1000
Typical Reverse Transfer Capacitance @ Vds (pF)
1(Max)@28V
AttributeValue
HTS8541.29.00.55
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
AvailabilityNo Stock Available
Maximum VSWR20
ConfigurationSingle
Package Width6.35
Package Height3.56
Package Length6.35
Supplier PackageCase DP
Maximum IDSS (uA)2000
Maximum Frequency (MHz)1000
Typical Power Gain (dB)13(Min)
Number of Elements per Chip1
Typical Drain Efficiency (%)40(Min)
Maximum Power Dissipation (mW)29000
Maximum Gate-Source Voltage (V)±20
Maximum Drain-Source Voltage (V)65
Maximum Gate Threshold Voltage (V)7
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)2
Typical Forward Transconductance (S)0.36(Min)
Typical Input Capacitance @ Vds (pF)20(Max)@0V
Typical Output Capacitance @ Vds (pF)11(Max)@28V
Maximum Gate-Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)1(Max)@28V

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