TOSHIBA MG400Q2YMS3(DAE)
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| Attribute | Value |
|---|---|
| Category | Power MOSFET |
| Material | SiC |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Manufacturer Lead Time | 32 weeks |
| Typical Fall Time (ns) | 60 |
| Typical Rise Time (ns) | 80 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1350000 |
| Maximum Gate-Source Voltage (V) | 25 |
| Typical Turn-On Delay Time (ns) | 190 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Typical Turn-Off Delay Time (ns) | 350 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 400 |
| Operating Junction Temperature (°C) | 150 |
| Typical Input Capacitance @ Vds (pF) | 36000@600V |
Purchase & Inquiry
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Packaging Process
