Step1: Product
Toshiba Semiconductor and Storage TK110A10PL,S4X
Images are for reference only
Manufacturer
Manufacturer No
TK110A10PL,S4X
Availability
In Stock
Package
TO-220-3 Full Pack
Packaging
Tube
Description
X35 PB-F POWER MOSFET TRANSISTOR
Detailed Description
N-Channel 100 V 36A (Tc) 36W (Tc) Through Hole TO-220SIS
Datasheet
Payment
Delivery
Mfr
Toshiba Semiconductor and Storage
Grade
-
Series
-
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Through Hole
Qualification
-
Package / Case
TO-220-3 Full Pack
Vgs(th) (Max) @ Id
2.5V @ 300µA
Base Product Number
TK110A10
Operating Temperature
175°C
Rds On (Max) @ Id, Vgs
10.8mOhm @ 18A, 10V
Power Dissipation (Max)
36W (Tc)
Supplier Device Package
TO-220SIS
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
2040 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
| Attribute | Value |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Grade | - |
| Series | - |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ Id | 2.5V @ 300µA |
| Base Product Number | TK110A10 |
| Operating Temperature | 175°C |
| Rds On (Max) @ Id, Vgs | 10.8mOhm @ 18A, 10V |
| Power Dissipation (Max) | 36W (Tc) |
| Supplier Device Package | TO-220SIS |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
Purchase & Inquiry
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Packaging Process
Step2: Vacuum Packaging
Step3: Anti-Static Bag
Step4: Package Boxes
Step5: Bar-Code Shipping Tags
Step6: Shipping
