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Toshiba Semiconductor and Storage TBC847B,LM

Toshiba Semiconductor and Storage TBC847B,LM electronic component product image

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Manufacturer No
TBC847B,LM
Quantity
3,070
Availability
In Stock
Package
TO-236-3, SC-59, SOT-23-3
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
TRANS NPN 50V 0.15A SOT-23-3
Detailed Description
Bipolar (BJT) Transistor NPN 50 V 150 mA 100MHz 320 mW Surface Mount SOT-23-3
Datasheet
Payment
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Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tape & Reel (TR); Cut Tape (CT)
Power - Max
320 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Base Product Number
TBC847
Operating Temperature
150°C (TJ)
Frequency - Transition
100MHz
Supplier Device Package
SOT-23-3
Vce Saturation (Max) @ Ib, Ic
400mV @ 100mA, 5mA
Current - Collector (Ic) (Max)
150 mA
Current - Collector Cutoff (Max)
30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50 V
AttributeValue
MfrToshiba Semiconductor and Storage
Series-
PackagingTape & Reel (TR); Cut Tape (CT)
Power - Max320 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Transistor TypeNPN
Base Product NumberTBC847
Operating Temperature150°C (TJ)
Frequency - Transition100MHz
Supplier Device PackageSOT-23-3
Vce Saturation (Max) @ Ib, Ic400mV @ 100mA, 5mA
Current - Collector (Ic) (Max)150 mA
Current - Collector Cutoff (Max)30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Voltage - Collector Emitter Breakdown (Max)50 V

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