Toshiba Semiconductor and Storage SSM6N62TU,LF

Toshiba Semiconductor and Storage SSM6N62TU,LF electronic component product image

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Manufacturer No
SSM6N62TU,LF
Quantity
2,950
Availability
In Stock
Package
6-SMD, Flat Leads
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET 2N-CH 20V 0.8A UF6
Detailed Description
Mosfet Array 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6
Datasheet
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Delivery
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AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Series
-
Packaging
Tape & Reel (TR); Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate, 1.2V Drive
Power - Max
500mW (Ta)
Manufacturer
Toshiba Semiconductor and Storage
Configuration
2 N-Channel (Dual)
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Vgs(th) (Max) @ Id
1V @ 1mA
Base Product Number
SSM6N62
Operating Temperature
150°C
Rds On (Max) @ Id, Vgs
85mOhm @ 800mA, 4.5V
Supplier Device Package
UF6
Gate Charge (Qg) (Max) @ Vgs
2nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
177pF @ 10V
Current - Continuous Drain (Id) @ 25°C
800mA (Ta)
AttributeValue
Series-
PackagingTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate, 1.2V Drive
Power - Max500mW (Ta)
ManufacturerToshiba Semiconductor and Storage
Configuration2 N-Channel (Dual)
Mounting TypeSurface Mount
Package / Case6-SMD, Flat Leads
Vgs(th) (Max) @ Id1V @ 1mA
Base Product NumberSSM6N62
Operating Temperature150°C
Rds On (Max) @ Id, Vgs85mOhm @ 800mA, 4.5V
Supplier Device PackageUF6
Gate Charge (Qg) (Max) @ Vgs2nC @ 4.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds177pF @ 10V
Current - Continuous Drain (Id) @ 25°C800mA (Ta)

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Packaging Process

Product before packing
Step1: Product
Product in vacuum packaging
Step2: Vacuum Packaging
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Step3: Anti-Static Bag
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